2013 Fiscal Year Final Research Report
Construction of III-V CMOS Photonics
| Project/Area Number |
22686034
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TAKENAKA Mitsuru 東京大学, 工学(系)研究科(研究院), 准教授 (20451792)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | 光電子集積回路 / CMOSフォトニクス / 細線導波路 / 光変調器 / 受光器 / InGaAs MOSFET / 基板貼り合せ / III-V-OI基板 |
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| Research Abstract |
We have successfully established the fabrication procedure of III-V-on-Insulator (III-V-OI) wafers by using the direct wafer bonding technology. As a result, we have demonstrated high-performance optical switches/modulators and waveguide photodetectors on the III-V-OI wafer in addiction to InP-based photonic-wire passive devices. We have also established the fabrication procedure of InGaAs MOS transistors on the III-V-OI wafer.
Thus, we have successfully demonstrated the basic concept of the III-V CMOS photonics platform on which ultra-small III-V-based photonic-wire devices and high-performance III-V-based CMOS transistors can be co-integrated by using the III-V-OI wafer.
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[Journal Article] Electron mobility enhancement of extremely thin body In_<0.7>Ga_<0.3>As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrates by metal-oxide-semiconductor interface buffer layers2012
Author(s)
S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
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Journal Title
Appl. Phys. Express
Volume: Vol.5
Pages: 014201
DOI
Peer Reviewed
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[Journal Article] High performance extremely thin body InGaAs-on-insulator metal-oxide semiconductor field-effect transistors on Si substrates with Ni-InGaAs metal source/drain2011
Author(s)
S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
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Journal Title
Appl. Phys. Express
Volume: Vol.4
Pages: 114201
DOI
Peer Reviewed
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