2011 Fiscal Year Final Research Report
Carrier transport at the organic hetero interface for air-stable n-type organic field-effect transistors
| Project/Area Number |
22750166
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Functional materials/Devices
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| Research Institution | Yamagata University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2011
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| Keywords | n型有機FET |
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| Research Abstract |
We have investigated the FET properties and the interfacial charge transport properties in the hetero-layered OFET having an interfacial layer of opposite polarity materials between the insulating layer and the channel layer. The improvement mechanism in the FET device composed of acceptor/p-type layer has been clarified by investigating the relationship among FET properties, energetic parameters, and thin film structure. We also discussed the electronic properties at the donor/n-type interface from the viewpoint of charge generation process.
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[Presentation] アセンビスイミドの合成と半導体特性2011
Author(s)
勝田修平, 田中和樹, 丸屋侑大, 森重樹, 増尾貞弘, 葛原大軌, 奥島鉄雄, 宇野英満, 中山健一, 山田容子
Organizer
第22回基礎有機化学討論会
Place of Presentation
つくば国際会議場(茨城県、つくば市)
Year and Date
2011-09-22
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