A novel way of preparation of high quality substrate material for highly efficient solar cells

2011 Fiscal Year Final Research Report

• Project/Area Number: 22760005
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Shizuoka University
• Principal Investigator: MUKANNAN Arivanandhan 静岡大学, 電子工学研究所, 助教 (50451620)
• Project Period (FY): 2010 – 2011
• Keywords: 太陽電池 / シリコン / シリコンゲルマニウム / 少数キャリア寿命 / 結晶欠陥密度

Research Abstract

The effect of Ge codoping on the minority carrier lifetime(MCL) in B-doped Czochralski-silicon(CZ-Si) crystals was investigated. The MCL increased from 110 to 176μs with increasing Ge concentration from 0 to 1×1020 cm-. 3. Light-induced degradation(LID) of B doped CZ-Si was suppressed by Ge codoping. Moreover, the flow pattern defect(FPD) density related to grown-in micro-defects(GMD) in B/Ge codoped CZ-Si decreased with increasing Ge concentrations. The interstitial oxygen(Oi) concentration was decreased as the Ge concentration increased. The suppressed LID effect in the B & Ge codoped CZ-Si was associated with the low concentration of B-O related defect generation. The mechanism by which the Ge concentration influence on the reduction of FPDs and Oi concentration is discussed based on Ge-vacancy defect formation at cooling the ingots. Ga-doped Si1-xGex alloy single crystals with x=0-0. 06 were successfully grown by Czochralski method. The results show that the MCL was increased and FPD density was decreased as the Ge composition increases up to x=0. 03 and the trend reverses when beyond 0. 03. The Ge plays an important role on the GMD formation.

Research Products

• [Journal Article] Impact of Ge codoping on the enhancement of minority carrier lifetime in B-doped Czochralski grown Si (2012)
  • Author(s): Mukannan Arivan and han, Raira Gotoh, Tatsuro Watahiki, Kozo Fujiwara, Yashiro Hayakawa, Satoshi Uda, Makoto Konagai
  • Journal Title: Journal of Applied Physics Volume: 111 Pages: 043707
• [Journal Article] Bulk growth of InGaSb alloy semiconductor under terrestrial conditions : A preliminary study for microgravity experiment at ISS (2012)
  • Author(s): M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, Y. Inatomi, Y. Hayakawa
  • Journal Title: Diffusion and Defect Forum Volume: vol.323-325 Pages: 539-544
• [Journal Article] Crystal growth of InGaSb alloy semiconductor at International Space Station : Preliminary experiments (2011)
  • Author(s): M. Arivan and han, G. Rajesh, T. Koyama, Y. Momose, K. Sankaranarayanan, A. Tanaka, Y. Hayakawa, T. Ozawa, Y. Okano, and Y. Inatomi
  • Journal Title: J. Jpn. Soc. Microgravity Appl. Volume: 28 Pages: 46-50
• [Journal Article] Growth of Homogeneous Mg2Si1-xGex Crystals for Thermoelectric Application (2011)
  • Author(s): Yasuhiro Hayakawa, Mukannan Arivanandhan, Yosuke Saito, Tadanobu Koyama, Yoshimi Momose, Hiroya Ikeda, Akira Tanaka, Cuilian Wen, Yoshihiro Kubota, Tamotsu Nakamura, Dinesh Kumar Aswal, Shovit Bhattachary, Yuko Inatomi and Hirokazu Tatsuoka
  • Journal Title: Thin Solid Films Volume: 519 Pages: 8532-8537
• [Journal Article] Effect of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism InGaSb solution : Numerical simulation and in-situ observation experiments (2011)
  • Author(s): A. Tanaka, H. Morii, T. Aoki, T. Koyama, Y. Momose, T. Ozawa, Y. Inatomi, Y. Takagi, Y. Okano, Y. Hayakawa
  • Journal Title: Journal of Crystal Growth Volume: 324 Pages: 157-162
• [Journal Article] The impact of Ge codoping on grown-in O precipitates in Ga doped Czochralski-silicon (2011)
  • Author(s): Mukannan Arivanandhan, Raira Gotoh, Kozo Fujiwara, Tetsuo Ozawa, Yasuhiro Hayakawa, Satoshi Uda
  • Journal Title: J. Crystal Growth Volume: 321 Pages: 24-28
• [Journal Article] Growth of highly homogeneous Si1-xGex bulk crystals for thermoelectric applications (2010)
  • Author(s): M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, T. Tatsuoka, D. K. Aswal, Y. Inatomi, Y. Hayakawa
  • Journal Title: J. Crystal Growth Volume: 318 Pages: 324-327
• [Journal Article] Ga segregation during Czochralski-Si crystal growth with Ge codoping (2010)
  • Author(s): Raira Gotoh, M. Arivanandhan, Kozo Fujiwara, Satoshi Uda
  • Journal Title: J. Crystal Growth Volume: 312 Pages: 2865-2870
• [Journal Article] In-situ Observations of Dissolution Process of GaSb into InSb Melt by X-ray Penetration Method (2010)
  • Author(s): G. Rajesh, M. Arivanandhan, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, Y. Inatomi, Y. Hayakawa
  • Journal Title: J. of Cryst. Growth Volume: 312 Pages: 2677-2682
• [Presentation] In-situ observation of dissolution process of Si into Ge melt by X-raypenetration Method (2012)
  • Author(s): M. Omprakash, M. Arivanandhan, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S. Moorthy Babu and Y. Hayakawa
  • Organizer: 59th Spring meeting of Japan Society of Applied Physics
  • Place of Presentation: Waseda University, Tokyo, Japan
  • Year and Date: 2012-03-18
• [Presentation] The effect of Ge codoping on the B-Opair formation in B-doped CZ-Si (2012)
  • Author(s): M. Arivanandhan, R. Gotoh, K. Fujiwara, S. Uda, Y. Hayakawa, M. Konagai
  • Organizer: 59th Spring meeting of Japan Society of Applied Physics
  • Place of Presentation: Waseda University, Tokyo, Japan
  • Year and Date: 2012-03-17
• [Presentation] Effect of gravity on the solute transport of bulk alloy semiconductor crystal growth (2012)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, A. Tanaka, Y. Takagi, Y. Okano, T. Ozawa, K. Sakata, Y. Inatomi
  • Organizer: 59th Spring meeting of Japan Society of Applied Physics
  • Place of Presentation: Waseda University, Tokyo, Japan
  • Year and Date: 2012-03-16
• [Presentation] Grown in micro defects(GMDs) in CZ grown ?Si (2012)
  • Author(s): M. Arivanandhan, R. Gotoh, K. Fujiwara, Y. Hayakawa and S. Uda
  • Organizer: Seminar under collaborative project
  • Place of Presentation: Tohoku University
  • Year and Date: 2012-02-29
• [Presentation] Growth of Ternary Alloy Semiconductors under Microgravity Experiment (2012)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, M. Omprakash, T. Koyama, Y. Momose, A. Tanaka, T. Ozawa, Y. Okano, K. Sakata and Y. Inatomi
  • Place of Presentation: Ann University
  • Year and Date: 2012-02-23
• [Presentation] Growth of homogeneous Si_<1-x> Gex andMg_2Si_<1-x> Ge_x for thermoelectric application (2012)
  • Author(s): Y. Hayakawa, M. Arivanandhan, M. Omprakash, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, H. Tatsuoka, A. Ishida, Y. Inatomi, D. K. Aswal, S. Bhattacharya and S. Moorthy Babu
  • Organizer: International Conference on Recent trends in Advanced Materials(ICRAM)
  • Place of Presentation: VIT University, Vellore, India
  • Year and Date: 2012-02-21
• [Presentation] Impact of Ge codoping on the photovoltaic characteristics of B-dopedCZ-Si (2011)
  • Author(s): M. Arivanandhan, R. Gotoh, T. Watahiki, K. Fujiwara, Y. Hayakawa, S. Uda and M. Konagai
  • Organizer: International Conference on Advanced Materials(ICAM), PSG College of Technology
  • Place of Presentation: Coimbatore, India
  • Year and Date: 2011-12-12
• [Presentation] Growth of In_xGa_<1-x> Sb alloy crystal using Gradient Heating Furnace under 1G condition (2011)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, K. Sakata and Y. Inatomi
  • Organizer: 25^<th> Conference of Japan Society of Microgravity and Applications
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2011-11-30
• [Presentation] The influence of germanium codoping on the reduction of interstitial oxygen concentration in boron-doped Czochralski-silicon : a novel approach to suppress light induced degradation (2011)
  • Author(s): M. Arivanandhan, R. Gotoh, T. Watahiki, K. Fujiwara, Y. Hayakawa, M. Konagai, S. Uda
  • Organizer: 21^<st> International Photovoltaic Science and Engineering Conference
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2011-11-29
• [Presentation] Improvement of photovoltaic characteristics of B-doped CZ-Si by Gecodoping (2011)
  • Author(s): Mukannan Arivanandhan, Raira Gotoh, Tatsuro Watahiki, KozoFujiwara, Satoshi Uda, YasuhiroHayakawa, Makoto Konagai
  • Organizer: 41^<st> National Conference on Crystal Growth
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2011-11-05
• [Presentation] Preparation and thermoelectric properties of compositionally homogeneousMg_2Si_<1-x> Ge_x (2011)
  • Author(s): M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, H. Tatsuoka, A. Ishida, D. K. Aswal, S. Moorthy Babu, Y. Inatomi, Y. Hayakawa
  • Organizer: 41^<st> National Conference on Crystal Growth
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2011-11-03
• [Presentation] Investigation of solute transport mechanism in GaSb/InSb/GaSb sandwich structure under 1G and 10^<-4> Gconditions by in-situ X-ray penetration and numerical methods (2011)
  • Author(s): Govindasamy Rajesh, Mukannan Arivanandhan, Natsuki Suzuki, Hisashi Morii, ToruAoki, Tadanobu Koyama, Yoshimi Momose, Akira Tanaka, Youhei Takagi, Yasunori Okano, Tetsuo Ozawa, YukoInatomi, Yasuhiro Hayakawa
  • Organizer: 41^<st> National Conference on Crystal Growth
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2011-11-03
• [Presentation] Enhancement of Photovoltaic characteristics of CZ grown-Si by Gecodoping (2011)
  • Author(s): M. Arivanandhan, R. Gotoh, T. Watahiki, K. Fujiwara, Y. Hayakawa, S. Uda and M. Konagai
  • Organizer: Invited Seminar at Department of Physics
  • Place of Presentation: Alagappa University(Karaikudi, India)
  • Year and Date: 2011-10-12
• [Presentation] Thermoelectric properties of compositionally homogeneous Si_<1-x> Gex and Mg_2Si_<1-x> Ge_x bulk crystals (2011)
  • Author(s): M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, A. Tanaka, H. Ikeda, T. Tatsuoka, A. Ishida, S. Bhattacharya, D. K. Aswal, S. Moorthy Babu, Y. Inatomi, Y. Hayakawa
  • Organizer: Seminar at Anna University
  • Place of Presentation: Anna University(Chennai, India)
  • Year and Date: 2011-10-10
• [Presentation] The effect of gravity on the dissolution process of GaSb into InSb melt : Experiment and Simulations (2011)
  • Author(s): G. Rajesh, M. Arivanandhan, H. Morii, N. Suzuki, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, Y. Okano, T. Ozawa, Y. Inatomi, Y. Hayakawa
  • Organizer: Autumn Meeting of Japan Society of Applied Physics
  • Place of Presentation: Japan
  • Year and Date: 2011-08-29
• [Presentation] Bulk growth of InGaSb alloy semiconductor under terrestrial conditions : A preliminary study for microgravity experiment at ISS (2011)
  • Author(s): M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, Y. Inatomi, Y. Hayakawa
  • Organizer: 8^<th> International conference on diffusion in materials(DIMAT-2011)
  • Place of Presentation: Dijon, France
  • Year and Date: 2011-07-05
• [Presentation] Effect of Gravity on dissolution process of GaSb into InSb melt (2010)
  • Author(s): M. Arivanandhan, H. Morii, N. Suzuki, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, K. Sankaranarayanan, Y. Okano, T. Ozawa, Y. Inatomi, Y. Hayakawa
  • Organizer: 8^<th> Japan-China-Korea workshop on Microgravity Sciences for Asian Microgravity pre-Symposium
  • Place of Presentation: Akiu, Sendai, Japan
  • Year and Date: 2010-09-25
• [Presentation] Crystal growth of InGaSb alloy semiconductor at International Space Station : Preliminary experiments (2010)
  • Author(s): M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, K. Sankaranarayanan, A. Tanaka, Y. Hayakawa, T. Ozawa, Y. Okano, and Y. Inatomi
  • Organizer: 8^<th> Japan-China-Korea workshop on Microgravity Sciences for Asian Microgravity pre-Symposium
  • Place of Presentation: Akiu, Sendai, Japan
  • Year and Date: 2010-09-24
• [Presentation] Semiconductor alloy crystals under microgravity conditions (2010)
  • Author(s): Yasuhiro Hayakawa, Mukannan Arivanandhan, Govindasamy Rajesh, Akira Tanaka, Tetsuo Ozawa, Yasunori Okano, Krishnasamy Sankaranarayanan, Yuko Inatomi
  • Organizer: International Conference on Physics of Emerging Functional Materials(PEFM 2010)
  • Place of Presentation: BARC, India
  • Year and Date: 2010-09-24
• [Presentation] Growth of Si_<1-x> Ge_x bulk crystals with highly homogeneous composition for thermoelectric applications (2010)
  • Author(s): M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, T. Tatsuoka, D. K. Aswal, Y. Inatomi, Y. Hayakawa
  • Organizer: 16^<th> International Conference on Crystal Growth(ICCG16)
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-08-11
• [Presentation] Analysis of Ga segregation behavior inCZ-Si crystal growth (2010)
  • Author(s): R. Gotoh, M. Arivanandhan, K. Fujiwara, S. Uda
  • Organizer: 16^<th> International Conference on Crystal Growth(ICCG16)
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Effect of oxygen on defect reaction mechanism in Ga and Ge codoped Czochralski-silicon (2010)
  • Author(s): M. Arivanandhan, R. Gotoh, K. Fujiwara, T. Ozawa, Y. Hayakawa, S. Uda
  • Organizer: 16^<th> International Conference on Crystal Growth(ICCG16)
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Enhancement of Ga doping in Czochralski-grown Si crystal and improvement of minority carrier lifetime by B-or Ge-codoping for PV application (2010)
  • Author(s): S. Uda, M. Arivanandhan, R. Gotoh, K. Fujiwara
  • Organizer: Institute of Crystal Growth
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2010-07-09
• [Presentation] Growth of Homogeneous Mg2Si1-xGexCrystals for Thermoelectric Application (2010)
  • Author(s): Mukannan Arivanandhan, Yosuke Saito, Tadanobu Koyama, Yoshimi Momose, Wen, Yoshihiro Kubota, Tamotsu Nakamura, Dinesh Kumar Aswal, Shovit Bhattachary, Yuko Inatomi and Hirokazu Tatsuoka
  • Organizer: Asia-Pacific conference on semiconducting silicides and related to materials Science and Technology towards sustainable optoelectronics(APAC-SILICIDE 2010)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2010-07-06
• [Presentation] Microgravity Experiments for the Growth of III-V Ternary Crystals (2010)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, A. Tanaka, T. Ozawa and Y. Inatomi
  • Organizer: Seminar at Periyar University
  • Place of Presentation: Salem, India
  • Year and Date: 2010-02-23
• [Remarks]
  • URL: http://maruhan.rie.shizuoka.ac.jp/
• [Patent(Industrial Property Rights)] シリコン結晶、シリコン結晶の製造方法およびシリコン多結晶インゴットの製造方法 (2011)
  • Inventor(s): 宇田聡、M. Arivanandhan、後藤頼良、藤原航三、早川泰弘
  • Industrial Property Rights Holder: 宇田聡、M. Arivanandhan、後藤頼良、藤原航三、早川泰弘
  • Industrial Property Number: 特許、特願2011-067402
  • Filing Date: 2011-03-25