2012 Fiscal Year Final Research Report
Designguidelinefor frequencytunable terahertz electromagnetic wave emittersonthe basis of semiconductorphysics
| Project/Area Number |
22760010
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Shiga Prefecture |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | 光物性 |
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| Research Abstract |
We, on thebasisofsemiconductor physics, have investigated frequency tunable terahertz (THz) emitter. i-GaAs/ n-GaAs structures is suitable the frequency tunable THz emitters because their built-in electric field is controlled with the i-GaAs layer thickness. In addition, we have found that in the i-GaAs(d nm)/n-GaAs structure has frequency tenability. These characteristics are provided by the coupling mode between the longitudinal optical phonon and plasmon. We have taken account of the fact that the effect of the built-in electric field dominates the characteristics of the THz wave. We have found that the strained multiple quantum wells with the (11n) orientation emits the monochromatic the THzwave.
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