Fabrication of strongly correlated heterojunctions with vanadium oxides

2011 Fiscal Year Final Research Report

• Project/Area Number: 22760016
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: The Institute of Physical and Chemical Research
• Principal Investigator: SHIBUYA Keisuke 独立行政法人理化学研究所, 交差相関超構造研究チーム, 特別研究員 (00564949)
• Project Period (FY): 2010 – 2011
• Keywords: 二酸化バナジウム / Mott絶縁体 / 強相関電子系 / ヘテロ接合 / 相転移

Research Abstract

With an aim of application utilizing strongly correlated electron materials, correlated heterojunctions with vanadium oxides were fabricated. Metal-insulator transition of the most prominent feature in vanadium dioxide emerges even at the heterointerface. It was found that work function of vanadium dioxide can be tuned with electron-or hole-doping. Furthermore, it has been demonstrated that the metal-insulator transition can be controlled by external fields such as electric field, light, and pressure.

Research Products

• [Journal Article] Optical investigation of metal-insulator transitions in V_<1-x> W_xO_2(0≦x≦0.33) (2012)
  • Author(s): J. S. Lee, K. Shibuya, M. Kawasaki, and Y. Tokura
  • Journal Title: Phys. Rev. B Volume: 85 Pages: 155110
  • Peer Reviewed
• [Journal Article] Competition between instabilities of Peierls transition and Mott transition in W-doped VO_2 thin films (2011)
  • Author(s): E. Sakai, K. Yoshimatsu, K. Shibuya, H. Kumigashira, E. Ikenaga, M. Kawasaki, Y. Tokura, and M. Oshima
  • Journal Title: Phys. Rev. B Volume: 84 Pages: 195132
  • Peer Reviewed
• [Journal Article] An x-ray induced insulator-metal transition in a thin film of electron-doped VO_2 (2011)
  • Author(s): K. Shibuya, D. Okuyama, R. Kumai, Y. Yamasaki, H. Nakao, Y. Murakami, Y. Taguchi, T. Arima, M. Kawasaki, and Y. Tokura
  • Journal Title: Phys. Rev. B Volume: 84 Pages: 165108
  • Peer Reviewed
• [Journal Article] Metal-insulator transitions in TiO_2/VO_2 superlattices (2010)
  • Author(s): K. Shibuya, M. Kawasaki, and Y. Tokura
  • Journal Title: Phys. Rev. B Volume: 82 Pages: 205118
  • Peer Reviewed
• [Presentation] Proliferating metal-insulator transition by x-ray in an electron doped vanadium dioxide thin film (2012)
  • Author(s): K. Shibuya, M. Kawasaki, and Y. Tokura
  • Organizer: SPIE Photonics West
  • Place of Presentation: San Francisco
  • Year and Date: 20120121-26
• [Presentation] Phase control of bistable metal-insulator states in VO_2 thin films (2011)
  • Author(s): K. Shibuya, M. Kawasaki, and Y. Tokura
  • Organizer: FIRST-QS^2C Workshop on "Emergent Phenomena of Correlated Materials"
  • Place of Presentation: Okinawa
  • Year and Date: 20111212-15
• [Presentation] Insulator-metal and structural phase transitions in electron-doped VO_2 film (2011)
  • Author(s): D. Okuyama, K. Shibuya, Y. Kitagawa, R. Kumai, T. Suzuki, Y. Yamasaki, H. Nakao, Y. Murakami, M. Kawasaki, Y. Taguchi, T. Arima, and Y. Tokura
  • Organizer: FIRST-QS^2C Workshop on "Emergent Phenomena of Correlated Materials"
  • Place of Presentation: Okinawa
  • Year and Date: 20111212-15
• [Presentation] Electric-field induced 3D carrier delocalization in VO_2 (2011)
  • Author(s): M. Nakano, K. Shibuya, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura
  • Organizer: FIRST-QS^2C Workshop on "Emergent Phenomena of Correlated Materials"
  • Place of Presentation: Okinawa
  • Year and Date: 20111212-15
• [Presentation] Metal-insulator transition in electron-doped VO_2 thin films (2011)
  • Author(s): D. Okuyama, K. Shibuya, Y. Kitagawa, R. Kumai, T. Suzuki, Y. Yamasaki, H. Nakao, Y. Murakami, M. Kawasaki, Y. Taguchi, T. Arima, and Y. Tokura
  • Organizer: 物構研シンポジウム' 11
  • Place of Presentation: つくば国際会議場
  • Year and Date: 20111206-07
• [Presentation] The roles of structural change and electron correlation in the metal-insulator transition of V_<1-x> W_xO_2 thin films (2011)
  • Author(s): E. Sakai, K. Yoshimatsu, K. Shibuya, H. Kumigashira, M. Kawasaki, Y. Tokura, and M. Oshima
  • Organizer: 18^<th> International Workshop on Oxide Electronics
  • Place of Presentation: California
  • Year and Date: 20110926-28
• [Presentation] 強相関物質における一次相転移の外部制御 (2011)
  • Author(s): 中野匡規、渋谷圭介、畑野敬史、小野新平、川崎雅司、岩佐義宏、十倉好紀
  • Organizer: 日本物理学会2011年秋季大会
  • Place of Presentation: 富山大学
  • Year and Date: 20110921-24
• [Presentation] 強相関物質を用いた電気二重層トランジスタ (2011)
  • Author(s): 中野匡規、渋谷圭介、畑野敬史、小野新平、川崎雅司、岩佐義宏、十倉好紀
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 20110829-0902
• [Presentation] 放射光電子分光によるV_<1-x> W_xO_2薄膜の電子状態解析 (2011)
  • Author(s): 坂井延寿、吉松公平、組頭広志、渋谷圭介、川崎雅司、十倉好紀、尾嶋正治
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 20110829-0902
• [Presentation] Nano-scale control of metal-insulator transition in VO_2 thin films (2011)
  • Author(s): K. Shibuya, M. Kawasaki, and Y. Tokura
  • Organizer: 6^<th> Multifunctional Materials Workshop
  • Place of Presentation: Alaska
  • Year and Date: 20110731-0803
• [Presentation] Metal-insulator transition in electron-doped VO_2 thin films and TiO_2/VO_2 superlattices (2011)
  • Author(s): K. Shibuya, D. Okuyama, Y. Taguchi, M. Kawasaki, and Y. Tokura
  • Organizer: 2011 Material Research Society Spring meeting
  • Place of Presentation: San Francisco
  • Year and Date: 20110425-29
• [Presentation] TiO_2/VO_2超格子薄膜の金属-絶縁体転移 (2011)
  • Author(s): 渋谷圭介、川崎雅司、十倉好紀
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 20110324-27
• [Presentation] 軟X線光電子分光によるV_<1-x> W_xO_2薄膜の電子状態解析 (2011)
  • Author(s): 坂井延寿、吉松公平、組頭広志、渋谷圭介、川崎雅司、十倉好紀、尾嶋正治
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 20110324-27
• [Presentation] 放射光電子分光によるV_<1-x> W_xO_2薄膜の電子状態解析 (2011)
  • Author(s): 坂井延寿、吉松公平、組頭広志、渋谷圭介、川崎雅司、十倉好紀、尾嶋正治
  • Organizer: 第28回PFシンポジウム
  • Place of Presentation: つくば国際会議場
  • Year and Date: 20110314-15
• [Presentation] WドープVO_2薄膜におけるX線誘起構造相転移 (2011)
  • Author(s): 奥山大輔、渋谷圭介、熊井玲児、鈴木健士、北川祐太朗、山崎裕一、中尾裕則、村上洋一、田口康二郎、有馬孝尚、川崎雅司、十倉好紀
  • Organizer: 第28回PFシンポジウム
  • Place of Presentation: つくば国際会議場
  • Year and Date: 20110314-15
• [Presentation] 放射光光電子分光によるV_<1-x> W_xO_2薄膜の電子状態解析 (2011)
  • Author(s): 坂井延寿、吉松公平、組頭広志、渋谷圭介、川崎雅司、十倉好紀、尾嶋正治
  • Organizer: 第24回日本放射光学会年会・放射光科学合同シンポジウム
  • Place of Presentation: つくば国際会議場
  • Year and Date: 20110107-10
• [Presentation] Electronic structure of V_<1-x> W_xO_2 thin films investigated by soft x-ray photoelectron spectroscopy (2010)
  • Author(s): E. Sakai, K. Yoshimatsu, K. Shibuya, H. Kumigashira, M. Kawasaki, Y. Tokura, and M. Oshima
  • Organizer: 物構研シンポジウム' 10
  • Place of Presentation: つくば国際会議場
  • Year and Date: 20101207-08
• [Presentation] Metal-insulator transition in electron-doped VO_2 thin films (2010)
  • Author(s): K. Shibuya, D. Okuyama, R. Kumai, Y. Yamasaki, H. Nakao, Y. Murakami, Y. Taguchi, T. Arima, M. Kawasaki, and Y. Tokura
  • Organizer: 物構研シンポジウム' 10
  • Place of Presentation: つくば国際会議場
  • Year and Date: 20101207-08
• [Presentation] WドープVO_2薄膜における永続的なX線誘起絶縁体金属相転移 (2010)
  • Author(s): 奥山大輔、渋谷圭介、熊井玲児、山崎裕一、中尾裕則、村上洋一、田口康二郎、有馬孝尚、川崎雅司、十倉好紀
  • Organizer: 日本物理学会平成22年度秋季大会
  • Place of Presentation: 大阪府立大学
  • Year and Date: 20100923-26
• [Presentation] X-ray induced phase transition in electron-doped VO_2 thin films (2010)
  • Author(s): K. Shibuya, D. Okuyama, R. Kumai, Y. Yamasaki, H. Nakao, Y. Murakami, Y. Taguchi, T. Arima, M. Kawasaki, and Y. Tokura
  • Organizer: 17^<th> International Workshop on Oxide Electronics
  • Place of Presentation: Awaji-island
  • Year and Date: 20100919-22
• [Presentation] 電子ドープVO_2薄膜におけるX線誘起絶縁体-金属相転移 (2010)
  • Author(s): 渋谷圭介、奥山大輔、熊井玲児、山崎裕一、中尾裕則、村上洋一、田口康二郎、有馬孝尚、川崎雅司、十倉好紀
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 20100914-17
• [Patent(Industrial Property Rights)] 電気制御調光素子 (2011)
  • Inventor(s): 中野匡規、畑野敬史、小野新平、岩佐義宏、渋谷圭介、川崎雅司、十倉好紀
  • Industrial Property Rights Holder: 中野匡規、畑野敬史、小野新平、岩佐義宏、渋谷圭介、川崎雅司、十倉好紀
  • Industrial Property Number: 特許、特願2011-163950
  • Filing Date: 2011-07-27
• [Patent(Industrial Property Rights)] 電解質メモリ素子 (2011)
  • Inventor(s): 中野匡規、畑野敬史、小野新平、岩佐義宏、渋谷圭介、川崎雅司、十倉好紀
  • Industrial Property Rights Holder: 中野匡規、畑野敬史、小野新平、岩佐義宏、渋谷圭介、川崎雅司、十倉好紀
  • Industrial Property Number: 特許、特願2011-163951
  • Filing Date: 2011-07-27