2012 Fiscal Year Final Research Report
High efficient spin injection into graphene
| Project/Area Number |
22760033
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
ENTANI Shiro 独立行政法人日本原子力研究開発機構, 先端基礎研究センター, 任期付研究員 (40549664)
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| Project Period (FY) |
2010 – 2012
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| Keywords | グラフェン |
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| Research Abstract |
Studies have been conducted for the realization of high efficient spin injection into graphene. Dependences of the peaks shifts of the Raman bands on the graphene layers number and metal species at the graphene/metal interfaces reveal that the interfacial interactions are dramatically different between single layer and multilayer graphenes. In situ analysis was performed on the graphene growth in ultrahigh vacuum chemical vapor deposition by exposing the epitaxial Ni(111) thin film to benzene vapor. It is shown that the highly uniform single- and bi-layer graphenes can be synthesized by the control of benzene exposure in the range of 10-10 5 langmuirs, reflecting a change in the graphene growth-rate by three orders of magnitude in between the first and second layer. Based on the above results, the graphene lateral devices with bottom contact-configuration were fabricated.
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