2011 Fiscal Year Final Research Report
Optical response using spin dynamics of InAs quantum dot cavity
| Project/Area Number |
22760043
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | The University of Tokushima |
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Principal Investigator |
MORITA Ken 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任講師 (30448344)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 光制御 |
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| Research Abstract |
We fabricated the GaAs/ AlAs multilayer cavity with Er-doped InAs quantum dots(QDs) for the ultrafast all optical switching due to the electron spin polarization rotation. The structure and its carrier decay time were characterized by the optical reflection and time-resolved optical measurements, respectively. In the optical communication waveband(~ 1. 5μm), we showed the fast decaying(<10 ps) electron spins are strongly polarized in the Er-doped InAs QDs in the cavity by the circular polarization time-resolved pump and probe methods. This indicates that the ultrafast all optical switching due to the electron spin polarization rotation is expected using the Er-doped InAs QD cavity.
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[Journal Article]2012
Author(s)
H. Ueyama, T. Takahashi, Y. Nakagawa, K. Morita, T. Kitada, and T. Isu
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Journal Title
Jpn. J. Appl. Phys
Volume: 51
Pages: 04DG06
DOI
Peer Reviewed
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