2011 Fiscal Year Final Research Report
Spin motive-force device with zinc-blende MnAs nanoparticles
| Project/Area Number |
22760225
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
PHAM Nam hai 東京大学, 大学院・工学系研究科, 特任助教 (50571717)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 薄膜 / 量子構造 |
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| Research Abstract |
We aimed at the development of fabrication technology of homogeneous ferromagnetic MnAs nanoparticles embedded in a GaAs matrix for semiconductor spintronic applications. We successfully developed(1) the spinodal decomposition technique using the phase decomposition diagram for fabrication of homogenous MnAs nanoparticles. Using this technique, we successfully fabricated(2) single electron transistors with strong spin accumulation and long spin relaxation time, and(3) double barrier tunnel junctions with zinc-blended MnAs nanoparticles and non-magnetic electrodes with magnetoresistance enhanced by in-elastic co-tunneling.
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[Presentation] Spintronics : Materials and Devices : A New Spin on Semiconductors-Spintronics Research Opens the Way to New Semiconductor Technology2012
Author(s)
M. Tanaka, S. Oyha, R. Nakane, P. N. Hai, S. Yada, R. Akiyama, Y. Ban, S. Sato, I. Muneta, R. Okazaki, and L. D. Anh
Organizer
International Symposium on Secure-Life Electronics
Place of Presentation
Takeda Hall, University of Tokyo
Year and Date
20120117-18
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[Remarks] ホームページと新聞報道The Japan Journal, January 2010, p. 31. Breakthrough-A New Principle of "Electromotive Force". A joint Japan-U. S. research team has found that, contrary to conventional wisdom, an electromotive force can be induced by a static magnetic field i
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