2012 Fiscal Year Final Research Report
Developing in-situ measurement for probing and analyzing carrier behavior in multilayer organic light-emitting diodes
| Project/Area Number |
22760227
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
TAGUCHI Dai 東京工業大学, 大学院・理工学研究科, 産学官連携研究員 (00531873)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 電気 / 電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) |
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| Research Abstract |
The electric-field-induced optical second-harmonic generation (EFISHG) measurement, which can directly probe carrier behavior in organic multilayer light-emitting diodes (OLEDs), was studied. The EFISHG measurement system is capable of catching carrier processes in the time range from 10 ns to 25 ms with carrier density > 10-7 C/cm2.
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