2011 Fiscal Year Final Research Report
Application of the inverse current induced magnetization switching phenomena for novel electronics device
| Project/Area Number |
22810021
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Fukushima National College of Technology |
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Principal Investigator |
ISOGAMI Shinji 福島工業高等専門学校, 一般教科, 准教授 (10586853)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 窒化鉄 / スピン / 磁性 / 電流誘起磁化反転 / 磁気抵抗効果 |
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| Research Abstract |
Inverse current induced magnetization switching phenomena is not fully understood by conventional spin torque theory showing that the spin torque direction is determined by the spin polarization of the pinned layer. It might be due to the spin polarization of the free layer as well. Using ferro-magnetic resonance technique, the damping factor of Fe4N thin film is found to be 0.007.Using the same technique, the spin pumping effect of Fe_4N system is enhanced comparing to that of Fe system. It is concluded that such the enhancement reflects the minority-spin conduction in Fe_4N film.
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