2011 Fiscal Year Final Research Report
Analysis of device characteristics of organic field-effect transistor based memories by infrared and raman spectroscopy
| Project/Area Number |
22850018
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Analytical chemistry
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| Research Institution | Waseda University |
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Principal Investigator |
SAKAI Heisuke 早稲田大学, 理工学術院, 助教 (30580401)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 有機トランジスタ / 有機メモリー / 有機絶縁体 / ラマン分光法 / 赤外分光法 |
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| Research Abstract |
In this study, by using micro-raman spectroscopy, we aimed to reveal the changes in microstructure of organic molecules in active layer after the operation of organic field-effect transistor based memories. However, the results were not sufficient to indicate the changes in microstructure. Thus, infrared spectroscopy was applied as more sensitive analysis, and this technique allowed for the analysis of the changes in microstructure.
And we reported the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric.
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