2011 Fiscal Year Final Research Report
Development of silicon quantum wire arrays for the next generation photovoltaics
| Project/Area Number |
22860022
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2011
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| Keywords | 太陽電池 / 量子効果 / バンドギャップ制御 / シリコンナノワイヤ / 光閉じ込め / エッチング / 第三世代 / ナノ構造 |
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| Research Abstract |
Using silica nanoparticles as an etching mask, SiNW arrays with the diameter of about 30 nm were successfully prepared by metal assisted chemical etching(MAE). Optical measurement revealed that prepared SiNW arrays have high optical confinement effect. The whole surface of SiNW arrays was successfully covered with Al_2O_3thin films deposited by atomic layer deposition(ALD). As a result, the quality of the SiNW arrays was improved. Finally, SiNW solar cells were fabricated and the photovoltaic effect was confirmed.
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