2023 Fiscal Year Annual Research Report
ウルツ鉱型半導体の力学特性に及ぼす光環境効果の実験的計測とメカニズム解明
| Project/Area Number |
22K14143
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
LI YAN 大阪大学, 大学院基礎工学研究科, 助教 (70930171)
|
|---|
| Project Period (FY) |
2022-04-01 – 2024-03-31
|
| Keywords | compound semiconductors / crystal plasticity / dislocations / oxides / nitrides / photoindentation |
|---|
| Outline of Annual Research Achievements |
This project studies dislocation-based plasticity in wurtzite semiconductors and investigates how light affects their nanoscale mechanical properties. In FY2023, we examined the effects of light on different slip systems in ZnO and GaN. Photoindentation experiments were conducted on wurtzite ZnO and GaN single crystals. Transmission electron microscope was adopted to verify the impact of light on dislocation behaviors. It was found that light tends to suppress the motion of both basal dislocations and pyramidal dislocations. Additionally, the unique distribution of nanoindentation-induced dislocations in ZnO should display promising functional properties. As for GaN, light illumination slightly affects dislocation nucleation, and shows a detectable influence on dislocation motion.
|
