2023 Fiscal Year Final Research Report
Realization of high performance crystal oxide based selector material by band engineering
| Project/Area Number |
22K14485
|
|---|
| Research Category |
Grant-in-Aid for Early-Career Scientists
|
| Allocation Type | Multi-year Fund |
|---|
| Review Section |
Basic Section 26020:Inorganic materials and properties-related
|
|---|
| Research Institution | National Institute of Advanced Industrial Science and Technology |
|---|
Principal Investigator |
Hatayama Shogo 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員 (50910501)
|
|---|
| Project Period (FY) |
2022-04-01 – 2024-03-31
|
| Keywords | セレクタ材料 / 揮発性スイッチ / クロスポイント型素子構造 / 結晶酸化物 |
|---|
| Outline of Final Research Achievements |
Novel selector materials with high thermal stability have been developed using transition metal oxides (TM-O) as the base material. TM-O typically exhibits insulating properties; however, it was found that incorporation of 13-16 group elements as a third component can realize ON/OFF functionality as a selector.In particular, when Te was added, TM-O-Te achieved a high thermal stability, with the amorphous phase remaining even after annealing up to 400°C. Although the TM-O with added third elements initially shows an amorphous phase, it was successfully crystallized without phase separation by optimizing the composition and heat treatment. This breakthrough also enabled us to explore material seeds for the realization of crystalline oxide-type selector materials.
|
| Free Research Field |
半導体デバイス材料
|
| Academic Significance and Societal Importance of the Research Achievements |
セレクタ材料は、次世代半導体デバイスを実現するクロスポイント型素子構造におけるキーマテリアルである。半導体製造プロセスの観点から、400℃以上の熱処理に耐えることが求められ、従来はAsやSeなどの毒性元素を含むことで高い耐熱性を実現してきた。一方、世界的に環境負荷の低減が進む昨今の社会事情から、As・Seフリーな新材料が求められてきた。本研究では、一般的なセレクタ材料系とは程遠いTM-Oに第三元素を添加して電子構造を制御することでON/OFFスイッチを発現させることに成功した。このことは、セレクタ材料開発において、新たな元素選択戦略を開拓するものであり学術的にも社会的にも意義が大きい。
|
