2023 Fiscal Year Final Research Report
Development of Wide-band X-ray gamma-ray and optical-infrared integrated imaging devices by Japan's Original Surface-Activated Wafer Bonding Technology
| Project/Area Number |
22K18721
|
|---|
| Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
|
| Allocation Type | Multi-year Fund |
|---|
| Review Section |
Medium-sized Section 16:Astronomy and related fields
|
|---|
| Research Institution | Kyoto University |
|---|
Principal Investigator |
Tsuru Takeshi 京都大学, 理学研究科, 教授 (10243007)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
和田 武彦 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 (50312202)
松前 貴司 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (10807431)
|
|---|
| Project Period (FY) |
2022-06-30 – 2024-03-31
|
| Keywords | ゲルマニウム撮像素子 / 異種半導体常温接合 / X線撮像素子 / 赤外線撮像素子 |
|---|
| Outline of Final Research Achievements |
We have developed a Si-Ge integrated imaging device that can observe broadband X-rays and gamma-rays in the 0.5-100 keV range, and optical and near-infrared light in the 0.3-1.8 μm range at once by adopting the room-temperature Sirface Activate Bonding (SAB) technique for Si-Ge semiconductor crystals. The photoresponse of the best devices was evaluated under three annealing conditions. The basic concept of Si-Ge was confirmed by successful observation of photocurrent by infrared light, which is not absorbed by Si. We clarified issues in bonding and assembling the imaging device by using an X-ray SOI sensor as the Si side. We expect that this improvement will complete the Si-Ge image sensor in the future.
|
| Free Research Field |
天文学
|
| Academic Significance and Societal Importance of the Research Achievements |
本研究はSi-Ge一体型撮像素子への第１歩であり，その実現は下記の意義がある．現状のSi以外の素材の2次元ピクセル撮像素子は全てバンプボンディングを介して2次元ASICで読み出す．これは複雑・高価で性能に限界がある．Si-Ge一体型は，自然な結晶接合を利用するので，安価で構造も強固である．ピクセルサイズや読み出しノイズなどの性能は，ベースのSi素子で決まり，高性能化が見込める．Ge以外も接合可能である．これは米国が独占している近赤外線領域では極めて重要である．低コストが重要な社会実装でも本研究の応用が見込める．例えば太陽光の影響がない赤外線TOFによる距離計測などに応用可能だろう．
|
