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2023 Fiscal Year Final Research Report

Spin current amplifier

Research Project

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Project/Area Number 22K18935
Research Category

Grant-in-Aid for Challenging Research (Exploratory)

Allocation TypeMulti-year Fund
Review Section Medium-sized Section 28:Nano/micro science and related fields
Research InstitutionThe University of Tokyo

Principal Investigator

Hayashi Masamitsu  東京大学, 大学院理学系研究科(理学部), 准教授 (70517854)

Co-Investigator(Kenkyū-buntansha) 河口 真志  東京大学, 大学院理学系研究科(理学部), 助教 (90792325)
Project Period (FY) 2022-06-30 – 2024-03-31
Keywordsスピン流 / 半導体 / 接合
Outline of Final Research Achievements

We have succeeded in developing n-type and p-type spin sources with high carrier mobility. The sources are Bi2Te3 and Sb2Te3 thin films, respectively. Current induced magneto-optical Kerr effect was used to determine the efficiency of spin current generation. Moreover, a Bi2Te3/Sb2Te3 bilayer was formed to study the effect of the np interface on the spin transport properties. We find a current induced magneto-optical signal unique to the bilayer, which indicates contributions from the interface state on the spin current generation. Further studies are required to determine how the pn and np junction contributes to generation, diffusion and relaxation of spin current, which are essential to develop a spin current amplifier.

Free Research Field

スピントロニクス

Academic Significance and Societal Importance of the Research Achievements

本研究では半金属や狭ギャップ半導体を用いて、pn接合の作製した。試料は多数キャリアが電子のBi2Te3と、ホールのSb2Te3を組み合わせて作製した。Bi2Te3、Sb2Te3どちらも移動度が大きく、有意なスピン流が生成されることを確認した。Bi2Te3/Sb2Te3接合を作製した結果、接合特有のスピン流の検出に成功した。スピンが関与するpn接合の作製はこれまでほとんど行われておらず、学術的意義が大きい。今後、スピン流を増幅できるスピン流アンプに展開できる可能性があり、本成果を土台に研究が大きく発展することを期待する。

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Published: 2025-01-30  

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