Observation of the electromagnetic effect of a single-domain electronic ferroelectric for investigation of novel phenomenon

2023 Fiscal Year Final Research Report

• Project/Area Number: 22K20361
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Multi-year Fund
• Review Section: 0202:Condensed matter physics, plasma science, nuclear engineering, earth resources engineering, energy engineering, and related fields
• Research Institution: Nihon University
• Principal Investigator: NAGATA Tomoko 日本大学, 理工学部, 助教 (00733065)
• Project Period (FY): 2022-08-31 – 2024-03-31
• Keywords: 電気抵抗スイッチング / 電子型強誘電体

Outline of Final Research Achievements

This study was initiated to observe the magnetic field response of electrical polarization and the electric field response of magnetisation. Novel electrical resistive switching was observed during DC electrical measurements, which is performed prior to the observation of electrical polarisation. Three differnt resistanse states were observed, whereas normal electrical resistance switching switches back and forth between two different resistance states. The mechanism of this phenomenon was also investigated and found to be likely to be due to multi-stage electrical polarisation reversal. The material is an electronic ferroelectric and its electrical polarisation reversal is achieved only by electron transfer without ionic displacement. Therefore, the multi-stage resistive switching of YbFe2O4 discovered in this study has potential applications in multi-level ReRAM with high speed, low energy consumption and long life.

Free Research Field

物性物理

Academic Significance and Societal Importance of the Research Achievements

本研究では、多段階の電気分極反転に起因すると考えられる多段階の電気抵抗スイッチングを見出した。多段階の電気抵抗スイッチングは、ReRAMに応用すれば０，１の２値でなく多値の記憶メモリとなるため、同じ体積により多くの情報を記録することができる。メカニズムが電気分極反転と考えられることも興味深い。本物質は電子強誘電体であり、その電気分極反転はイオン変位を伴わず電子移動のみによって実現する。これらの特性をあわせて考えると、本研究で発見したYbFe2O4の多段階抵抗スイッチングは、高速・低消費エネルギー・長寿命の多値ReRAMへの応用が期待できる革新的なものである。