Platform technology for statistical measurement of electrical characteristics to accelerate next-generation memory research.

2023 Fiscal Year Final Research Report

• Project/Area Number: 22K20422
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Multi-year Fund
• Review Section: 0302:Electrical and electronic engineering and related fields
• Research Institution: Tohoku University
• Principal Investigator: Mawaki Takezo 東北大学, 未来科学技術共同研究センター, 助教 (10966328)
• Project Period (FY): 2022-08-31 – 2024-03-31
• Keywords: メモリ / 半導体デバイス / 計測技術 / テスト回路 / 三次元積層

Outline of Final Research Achievements

We developed a platform technology for measuring electrical characteristics that can be commonly used for next-generation memory and other semiconductor devices. First, a common base circuit was fabricated and it was verified that the voltage of the DUT could be measured as expected. Next, HfOx film memory elements were formed as DUT by an additional manufacturing process and evaluated. It was demonstrated that the resistance of the memory element changed with forming and set/reset operations, and that large-scale measurement and analytical evaluation of the resistance characteristics was possible. The introduction of 3D stacking technology enables the evaluation of various semiconductor elements.
We developed a statistical electrical characteristics measurement platform technology that enables prototypes with short turnaround time and low cost, which promotes research into next-generation memory and other semiconductor devices.

Free Research Field

半導体集積回路

Academic Significance and Societal Importance of the Research Achievements

本研究で確立した電気特性計測プラットフォーム技術は、実デバイスにおける解析が困難であるメモリ等の半導体デバイスに対して連続的なアナログ値での評価・解析を可能にした。したがって平均的な現象把握にとどまらない、統計的なばらつき分布を計測しその主分布を構成する物理現象及び低確率で発現し分布から外れる現象の評価を可能にした。
本技術は、短ターンアラウンドタイム・低コストでの半導体素子の試作及び統計的評価を可能にし、次世代メモリ材料をはじめとした半導体素子の評価機会を拡大することで、当該分野における研究開発の飛躍的な促進・発展に寄与する。