Lowering strong coercive electric field of ferroelectric nitrides through utilization of the charged interfaces

2023 Fiscal Year Final Research Report

• Project/Area Number: 22K20427
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Multi-year Fund
• Review Section: 0302:Electrical and electronic engineering and related fields
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Okamoto Kazuki 東京工業大学, 物質理工学院, 助教 (60965937)
• Project Period (FY): 2022-08-31 – 2024-03-31
• Keywords: 強誘電体 / 窒化物 / 分極反転 / 積層膜

Outline of Final Research Achievements

Epitaxially grown single layer films and multiple layer stacked films were fabricated and their polarization switching behaviours were characterized to achieve lowering high coercive electric field in ferroelectric nitrides. It was revealed that the average compositional ratio of dopant Sc in multiple layer stacked films played an important role in polarization switching behaviour. The study provides important insight of polarization switching behaviour of ferroelectric nitrides.

Free Research Field

窒化物強誘電体

Academic Significance and Societal Importance of the Research Achievements

現在、AlN基窒化物強誘電体はすでに圧電材料として社会実装されており、強誘電体メモリに用いる候補材料として特に注目されているウルツ構造型窒化物強誘電体の一つである。AlN基窒化物強誘電体は高い残留分極値を示す一方で高い強固な抗電界Ecを示し、これが課題となっている。本研究では、単層膜と積層膜の分極反転挙動の調査を行い、それらの設計指針として重要な分極反転過程の理解を深める知見を得ることができた。