Deep levels in gallium oxide homoepitaxial layers

2023 Fiscal Year Final Research Report

• Project/Area Number: 22K20428
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Multi-year Fund
• Review Section: 0302:Electrical and electronic engineering and related fields
• Research Institution: Kyoto Institute of Technology
• Principal Investigator: Kanegae Kazutaka 京都工芸繊維大学, 電気電子工学系, 助教 (30962435)
• Project Period (FY): 2022-08-31 – 2024-03-31
• Keywords: 酸化ガリウム / 点欠陥 / 過渡容量分光法

Outline of Final Research Achievements

To design and manufacture devices that maximize the potential of gallium oxide, it is essential to have a deep understanding and control of the deep levels in gallium oxide that affect device characteristics. Accurate quantification of deep levels in gallium oxide is important.
In this study, development of device processes and a measurement system for quantifying deep levels in gallium oxide epitaxial layers were performed. As a method for quantifying deep levels, capacitance transient spectroscopy was focused, and prototypes of β-gallium oxide Schottky barrier diodes were fabricated for evaluation purposes. We successfully manufactured devices with ideal characteristics consistently. The measurement system was also revamped, enabling more efficient and higher precision measurements.

Free Research Field

半導体物性評価

Academic Significance and Societal Importance of the Research Achievements

半導体結晶中の深い準位は、半導体の電気的・光学的性質に大きな影響を及ぼすため、その研究は学術的に重要である。また、電子デバイスにおいて、そのデバイス特性に大きく影響を与えうる半導体デバイス活性領域に存在する深い準位の理解を十分に深め、制御していくことは、デバイス性能の向上に直結するため、半導体パワーデバイス応用が期待される酸化ガリウム中の深い準位に関する研究は、徹底した省エネルギー社会に貢献できる。