2023 Fiscal Year Annual Research Report
一次元ヘテロ構造ナノチューブの輸送特性とデバイス応用
| Project/Area Number |
22KF0070
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| Allocation Type | Multi-year Fund |
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| Research Institution | The University of Tokyo |
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Principal Investigator |
丸山 茂夫 東京大学, 大学院工学系研究科(工学部), 教授 (90209700)
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| Co-Investigator(Kenkyū-buntansha) |
FENG YA 東京大学, 大学院工学系研究科(工学部), 外国人特別研究員
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| Project Period (FY) |
2023-03-08 – 2024-03-31
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| Keywords | SWCNTs / BNNT / 1D vdW heterostructure / TEM / thermal transport / Raman spectroscopy / tensile strain |
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| Outline of Annual Research Achievements |
To form the individual heterostructure nanotube, we found that the CVD process could induce tensile strain in the suspended SWCNT, and resultantly the thermal conductivity of the SWCNT was enhanced by this uniaxial strain enabled by BNNT anchoring, which is the first experimental study to show the relation of the axial strain and the thermal conductivity of SWCNT. This implies that thermal-conductivity adjustable SWCNT materials could be fabricated making the best of this property. Besides, the efficiency of boron nitride coating on macroscopic SWCNT thin film has been evaluated by various optical spectroscopy, to provide important information about the heterostructure nanotubes. The electronic device applications of the heterostructure nanotubes are studies expensively, and the results will be published in the future. Therefore, the primary goals of the research plan are fulfilled as expected.
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