2023 Fiscal Year Annual Research Report
| Project/Area Number |
22KF0384
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| Allocation Type | Multi-year Fund |
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
HILL Jonathan 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, グループリーダー (30421431)
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| Co-Investigator(Kenkyū-buntansha) |
KILINC VOLKAN 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 外国人特別研究員
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| Project Period (FY) |
2023-03-08 – 2024-03-31
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| Keywords | DNA sensing / DNA oFET / DNA data storage / nanoporous DNA layer |
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| Outline of Annual Research Achievements |
A novel sensing method for detecting specific DNA sequences was developed and proposed as a technique for developing DNA-based random access memory (DNA-RAM). The method involves preparation of DNA-modified field effect transistor (DNA-FET) using organic semiconductors as the transistor element. The DNA-FET is based on a co-planar Au-gated fully organic transistor appended with short single-stranded DNA (ssDNA) probes bearing a blocking molecule to prevent partial hybridization and achieve perfect selectivity for short length DNA. The active layer has a DNA nanopore/nanopillar architecture which promotes device performance by facilitating hybridization. Analysis of device topography and transconductance indicate higher binding site accessibility for this specific structure leading to stronger discrimination in the physical retrieval of short length ssDNA. Based on the simple concept and excellent scalability, the DNA-FET presented here addresses the problems inherent in the random-access of data storage encountered to date in the related DNA systems. In connected work, it was discovered that dye-modified DNA can self-assemble into unique pod structures with densely packed DNA.
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