Semiconductor Materials and Devices with Nonvolatile and Reconfigurable Functions

2015 Fiscal Year Final Research Report

• Project/Area Number: 23000010
• Research Category: Grant-in-Aid for Specially Promoted Research
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering; Engineering
• Research Institution: The University of Tokyo
• Principal Investigator: TANAKA Masaaki 東京大学, 大学院工学系研究科, 教授 (30192636)
• Co-Investigator(Kenkyū-buntansha): OHYA Shinobu 東京大学, 大学院工学系研究科, 准教授 (20401143) ; NAKANE Ryosho 東京大学, 大学院工学系研究科, 特任准教授 (50422332) ; Pham Nam Hai 東京工業大学, 工学院, 准教授 (50571717)
• Research Collaborator: PALMSTROM Chris カリフォルニア大学, 材料科学科, 教授
• Project Period (FY): 2011 – 2015
• Keywords: スピン / スピントロニクス / 磁性半導体 / 共鳴トンネル効果 / バンドエンジニアリング / スピン依存伝導 / トンネル磁気抵抗効果 / スピントランジスタ

Outline of Final Research Achievements

By introducing magnetic atoms and materials into semiconductor materials and devices, we have successfully created new ferromagnetic semiconductors and ferromagnet/semiconductor hybrid structures to utilize not only charge transport of carriers but also spin degrees of freedom, and have realized a variety of new functionalities. Using these materials, we have designed and fabricated new semiconductor spintronics devices, in particular spin transistors, with spin-related functions, and have proved their device operation principles. Our results pave the way to the applications to non-volatile memory and reconfigurable logic circuitry.

Free Research Field

工学 応用物理学・工学基礎 応用物性・結晶工学
工学 電気電子工学 電子・電気材料工学