2015 Fiscal Year Final Research Report
Compound Semiconductor Nanowires and their Optical Device Applications
| Project/Area Number |
23221007
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Hokkaido University |
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Principal Investigator |
Fukui Takashi 北海道大学, 情報科学研究科, 名誉教授 (30240641)
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| Co-Investigator(Kenkyū-buntansha) |
TOMIOKA KATSUHIRO 北海道大学, 大学院情報科学研究科, 助教 (60519411)
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| Project Period (FY) |
2011-04-01 – 2016-03-31
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| Keywords | 化合物半導体 / ナノワイヤ / 結晶成長 / 発光ダイオード / 太陽電池 |
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| Outline of Final Research Achievements |
A selective growth method for semiconductor nanowires by using electron beam lithography and metal organic vapor phase epitaxy has been established. The crystal phase transition mechanism and the nanowire growth on graphene were clarified. The crystal structure and optical properties of GaAs and InP nanowires grown were characterized by electron microscopy and photoluminescence. Light emitting diodes, solar cells and transistors using hetero-structure/p-n junction nanowires were fabricated to investigate the device characteristics, which showed promise for application to future nano-electronics.
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| Free Research Field |
工学
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