High functionalization of nonlinear dielectric microscopy and its application to electronic devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 23226008
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Tohoku University
• Principal Investigator: Cho Yasuo 東北大学, 電気通信研究所, 教授 (40179966)
• Co-Investigator(Kenkyū-buntansha): 山末 耕平 東北大学, 電気通信研究所, 助教 (70467455) ; 平永 良臣 東北大学, 電気通信研究所, 助教 (70436161)
• Project Period (FY): 2011-04-01 – 2016-03-31
• Keywords: 走査型非線形誘電率顕微鏡 / 超高次走査型非線形誘電率顕微鏡 / 走査型非線形誘電率ポテンショメトリ / 強誘電体記録 / 超高密度記録 / 化合物パワー半導体デバイス

Outline of Final Research Achievements

New SNDM family method, which measures not only dC/dV term but also higher order differentiation terms, has been developed. Using this method, we can obtain much more precise physical information of materials and devices. We name this technique super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM). We can easily reconstruct C-V curve at each pixel with this method. As a result, the analysis ability is drastically improved.Next, we have developed scanning nonlinear dielectric potentiometory (SNDP) which can measure dipole moment induced surface potential with atomic resolution. Using this method, we simultaneously measured topography and surface potential of mono layer graphene formed on the 4H-SiC(0001) substrate. Finally, memory density of 3.4Tbit/inch2 were achieved using the hard-disk-drive (HDD)-type ferroelectric data storage system.

Free Research Field

誘電体工学