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2015 Fiscal Year Final Research Report

Development of dopant atom devices based on silicon nanostructures

Research Project

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Project/Area Number 23226009
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionShizuoka University

Principal Investigator

Tabe Michiharu  静岡大学, 電子工学研究所, 教授 (80262799)

Co-Investigator(Kenkyū-buntansha) SHINADA Takahiro  東北大学, 国際集積エレクトロニクス研究開発センター, 教授 (30329099)
ONO Yukinori  富山大学, 大学院理工学研究科, 教授 (80374073)
MIZUTA Hiroshi  北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (90372458)
MORARU Daniel  静岡大学, 工学部, 准教授 (60549715)
Co-Investigator(Renkei-kenkyūsha) FUJIWARA Satoshi  NTT, 物性科学基礎研究所, 上席特別研究員 (70393759)
Project Period (FY) 2011-04-01 – 2016-03-31
Keywords電子デバイス・機器 / シングルドーパント / シリコン / 量子ドット / ドーパント原子 / ナノデバイス / トランジスタ
Outline of Final Research Achievements

Silicon technology has continuously developed by utilizing statistically averaged effect of many dopants. This research project aims at developing individual dopant atom devices for ultimately miniaturized devices. As a result, in order to step forward for practical application, we have succeeded in high-temperature (room temperature) operation with help of a quantum dot formation due to a few dopants. Based on these results, dopant device technology has launched for new electronics.

Free Research Field

半導体電子工学

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Published: 2017-05-10  

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