2013 Fiscal Year Final Research Report
Control and detection of spin dynamics in semiconductor/ferromagent hybrid structures
Project/Area Number |
23246002
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | University of Tsukuba (2012-2013) Tohoku University (2011) |
Principal Investigator |
OHNO Yuzo 筑波大学, 数理物質系, 教授 (00282012)
|
Co-Investigator(Kenkyū-buntansha) |
YAMANOUCHI Michihiko 東北大学, 電気通信研究所, 助教 (40590899)
|
Project Period (FY) |
2011-11-18 – 2014-03-31
|
Keywords | スピントロニクス / GaAs / スピン注入 / Hanle効果 / 顕微Kerr測定 |
Research Abstract |
We fabricated three-terminal devices which have a CoFeB/MgO/GaAs magnetic tunnel junction with perpendicular magnetization, and performed magnetotransport and Kerr microscopy measurements to clarify the generation and detection of spin accumulation in GaAs semiconductors. In magnetotransport measurements, we observed typical Hanle effect. However, in Kerr microscopy measurements, the Kerr rotation signal remains even in high in-plane magnetic fields : Bx =+/- 2.0 T. The results suggest that the interface between MgO and GaAs plays crucial role for perpendicular spin injection.
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Research Products
(9 results)