2013 Fiscal Year Final Research Report
Improvement of quantum efficiency of super-high brightness and high spin-polarization photocathodes
| Project/Area Number |
23246003
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya Industrial Science Research Institute (2012-2013)
Nagoya University (2011) |
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Principal Investigator |
TAKEDA Yoshikazu 公益財団法人名古屋産業科学研究所, その他部局等, 研究員 (20111932)
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| Co-Investigator(Kenkyū-buntansha) |
JIN Xiugaung 名古屋大学, 学内共同利用施設等, 特任助教 (20594055)
TABUCHI Masao 名古屋大学, 学内共同利用施設等, 特任教授 (90222124)
FUCHI Shingo 青山学院大学, 理工学部, 准教授 (60432241)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 結晶成長 / スピントロニクス / 表面・界面物性 / 量子エレクトロニクス / 量子ビーム |
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| Research Abstract |
Using the high precision ultrasonic mass flow controller, the strain-compensated superlattice was grown up to 90-pair (using previous controller 12-pair was a limit.) . Then, the originally planned technique, i.e., the adhesion process onto a transparent substrate, was not necessary and the adhesion process was not tried. In addition to it, lattice-matching and transparent substrate, ZnSe, was available and the growth of GaAs on ZnSe was successfully conducted. This also shows that the adhesion process was not necessary. Due to the stability of the appropriate excitation energy, use of semiconductor laser became possible. The excitation wavelength at the peak polarization located at the flat region (770~780nm) of the density-of states and then the quantum efficiency increased by 4 times.
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Research Products
(21 results)
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[Presentation] Super-high brightness and high spin-polarization photocathode for spin-polarized LEEM and pulse spin-TEM2011
Author(s)
X.G.Jin, A.Mano, N.Yamamoto, M.Suzuki, T.Yasue, T.Koshikawa, N.Tanaka, and Y.Takeda
Organizer
The 19^<th> International Conference on Electronic Properties of Two-Dimensional Systems and the 15^<th> Conference on Modulated Semiconductor Structures
Place of Presentation
Tallahassee, Florida, USA, Th-1-5
Year and Date
20110725-29
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[Patent(Industrial Property Rights)] 半導体フォトカソード2012
Inventor(s)
金 秀光, 竹田 美和, 山本 将博, 宮島 司, 本田 洋介
Industrial Property Rights Holder
金 秀光, 竹田 美和, 山本 将博, 宮島 司, 本田 洋介
Industrial Property Rights Type
特許権
Industrial Property Number
特願 2012-221001(JP)
Filing Date
20121000
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