2013 Fiscal Year Final Research Report
Realization of non-dislocation SiC crystal
| Project/Area Number |
23246004
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
UJIHARA Toru 名古屋大学, 工学(系)研究科(研究院), 教授 (60312641)
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| Co-Investigator(Kenkyū-buntansha) |
HARADA Shunta 名古屋大学, 工学研究科, 助教 (30612460)
SASAKI Katsuhiro 名古屋大学, 工学研究科, 准教授 (00211938)
KATO Masashi 名古屋工業大学, 工学研究科, 准教授 (80362317)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 結晶成長 / シリコンカーバイド / 転位 |
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| Research Abstract |
The improvement of substrate quality is important to apply SiC materials to high-performance power device. The purpose of this study is to achieve "ultra-high quality" crystal grown by solution growth method. In our research, it has been revealed that threading dislocations are converted to other defects in the basal planes by macrosteps advancing and the converted defects are swept from the crystal during growth process. In addition, the converted ratio depends on the height and microstructure of the macrosteps. Utilizing this conversion phenomenon, we have demonstrated the ultra-high quality growth of SiC.
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