Spin dependent resonant tunneling and related properties in perfectly lattice-matched double tunnel junctions

2014 Fiscal Year Final Research Report

• Project/Area Number: 23246006
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: MITANI Seiji 独立行政法人物質・材料研究機構, 磁性材料ユニット, グループリーダー (20250813)
• Co-Investigator(Kenkyū-buntansha): KASAI Shinya 物質・材料研究機構, 磁性材料ユニット, 主任研究員 (20378855) ; SUKEGAWA Hiroaki 物質・材料研究機構, 磁性材料ユニット, 主任研究員 (30462518)
• Co-Investigator(Renkei-kenkyūsha): HAYASHI Masamitsu 物質・材料研究機構, 磁性材料ユニット, 主任研究員 (70517854) ; NIIZEKI Tomohiko 物質・材料研究機構, 磁性材料ユニット, NIMSポスドク研究員 (40567749)
• Research Collaborator: WEN Zhenchao ; KOO Jungwoo ; SCHEIKE Thomas
• Project Period (FY): 2011-04-01 – 2015-03-31
• Keywords: 格子整合 / ２重トンネル接合 / トンネル磁気抵抗効果 / 共鳴トンネル効果 / スピントロニクス素子

Outline of Final Research Achievements

Magnetic tunnel junction (MTJ) is a basic heterostructure used in magnetic read heads and magnetic memory devices etc. In this study, lattice-matched MTJs were prepared by using state-of-the-art thin film growth techniques, and resonant tunnel magnetoresistance (TMR) was studied. We showed that quantum well states formed in a bcc-Cu layer is useful to bring about resonant TMR phenomena and that resonant TMR can coexist with a strong interface perpendicular magnetic anisotropy (PMA) despite possible spin mixing due to PMA. In addition, perfectly lattice-matched MTJs, in which almost no misfit dislocation was introduced, and their large TMR were successfully obtained by using Heusler alloy electrodes. These results are likely to be quite useful for developing high-performance MTJ devices in next-generation spintronics.

Free Research Field

スピントロニクス