ゲルマニウムＭＯＳ界面電気伝導機構の解明と高移動度化手法の確立

2013 Fiscal Year Annual Research Report

• Project/Area Number: 23246058
• Research Institution: The University of Tokyo
• Principal Investigator: 高木 信一 東京大学, 工学(系)研究科(研究院), 教授 (30372402)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Keywords: MOSFET / ゲルマニウム / 移動度 / 反転層 / サブバンド

Research Abstract

(1) Ge MOS界面移動度の系統的評価と散乱機構の明確化、面方位効果の明確化・・・バンド内界面準位へのキャリア捕獲によるGe MOSFETの実効移動度の劣化を改善するため、Al2O3/GeOx/Ge MOS構造に、原子状重水素アニールを施すことにより、バンド内準位量を低減し、表面キャリア濃度 8E12cm-2 において電子移動度488cm2/Vsを実証した。また、Al2O3/GeOx/Ge構造の(100), (110), (111)面nMOSFETとpMOSFETの動作を実証し、正孔移動度は(110)面、電子移動度は(100)面で最大ピーク移動度を取ることが分かった。
(2) GOI MOS界面移動度の系統的評価と散乱機構およびGOI薄膜効果の明確化・・・酸化濃縮法により作製したp型GOI基板に対し、SOGからのSbの固層選択拡散により高濃度n型S/Dを形成し、反転型GOI nMOSFETの動作を実現した。GOI厚16nmのGOI nMOSFETにおいて、5桁以上の大きなオン・オフ電流比、実効移動度として107cm2/Vsの値を実現した。また極薄GOI基板の作製法として、AlAs/InGaP/GaAs基板上のGe層を、Al2O3を挟んでSi基板上に直接貼り合わせする方法を提案し、18nmまでのGOI層薄膜化に成功した。GOI膜厚を55-18nmの間で系統的に変えたnMOSFETとpMOSFETを作製し、移動度のGOI膜厚依存性を明らかにした。18nmのGOI膜厚で、235 及び122cm2/Vs のピーク電子及び正孔移動度を実現した。
(3) Ge/GOI MOSFETの界面移動度に与えるひずみの影響の明確化・・・緩和SiGe上の二軸圧縮ひずみGe基板上に0.8 nmのEOTで552cm2/Vsのピーク正孔移動度を実現した。

Current Status of Research Progress

Reason

25年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

25年度が最終年度であるため、記入しない。

Research Products

• [Journal Article] Impact of Plasma Post Oxidation Temperature on the Electrical Properties of Al2O3/GeOx/Ge p- and n-MOSFETs (2014)
  • Author(s): R.Zhang, J.-C.Lin, X.Yu, M.Takenaka and S.Takagi
  • Journal Title: IEEE Trans, Electron Devices Volume: vol.61, no.2 Pages: 416-422
  • DOI: 10.1109/TED.2013.2295822
  • Peer Reviewed
• [Journal Article] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform (2013)
  • Author(s): S.Takagi, S.-H.Kim, M.Yokoyama, R.Zhang, N.Taoka, Y.Urabe, T.Yasuda, H.Yamada, O.Ichikawa, N.Fukuhara, M.Hata and M.Takenaka
  • Journal Title: Solid State Electronics Volume: Vol.88 Pages: 2-8
  • DOI: 10.1016/j.sse.2013.04.020
  • Peer Reviewed
• [Journal Article] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties (2013)
  • Author(s): S.Takagi, R.Zhang, and M.Takenaka
  • Journal Title: Micoroelectron. Eng. Volume: 109 Pages: 389-395
  • DOI: 10.1016/j.mee.2013.04.034
  • Peer Reviewed
• [Journal Article] Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces (2013)
  • Author(s): R.Zhang, J.-C.Lin, X.Yu, M.Takenaka and S.Takagi
  • Journal Title: Micoroelectron. Eng. Volume: 109 Pages: 97-100
  • DOI: 10.1016/j.mee.2013.03.034
  • Peer Reviewed
• [Journal Article] III-V/Ge CMOS device technologies for high performance logic applications (invited) (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
  • Journal Title: ECS Transactions Volume: 53 (3) Pages: 85-96
• [Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs (2013)
  • Author(s): S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
  • Journal Title: ECS Transactions Volume: 53 (3) Pages: 97-105
• [Journal Article] III-V/Ge MOS Transistor Technologies for Future ULSI (invited) (2013)
  • Author(s): S. Takagi and M. Takenaka
  • Journal Title: ECS Transactions Volume: 54 (1) Pages: 39-54
• [Journal Article] Performance Enhancement Technologies in III-V/Ge MOSFETs (invited) (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
  • Journal Title: ECS Transactions Volume: 58(9) Pages: 137-148
• [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates (2014)
  • Author(s): X.Yu, R.Zhang, J.Kang, T.Osada, M.Hata, M.Takenaka and S.Takagi
  • Organizer: 21st International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
  • Place of Presentation: Ambassador Hotel Hsinchu, Hsinchu, Taiwan
  • Year and Date: 20140428-30
• [Presentation] III-V and Germanium FET Technologies on Si platform (2014)
  • Author(s): S. Takagi
  • Organizer: Compound Semiconductor International Conference
  • Place of Presentation: Sheraton Frankfurt Airport Hotel, Frankfurt, Germany
  • Year and Date: 20140318-20140319
  • Invited
• [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks (2014)
  • Author(s): R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt and S. Takagi
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
  • Year and Date: 20140317-20140320
• [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates (2014)
  • Author(s): X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
  • Year and Date: 20140317-20140320
• [Presentation] Sb拡散ソース・ドレインを有する酸化濃縮基板上反転型極薄膜Ge-on-Insulator nMOSFET (2014)
  • Author(s): 金佑彊, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
  • Year and Date: 20140317-20140320
• [Presentation] 容量値の時間応答を利用したGe MOS界面における遅い準位の定量的評価 (2014)
  • Author(s): 田中克久，張睿，竹中充，高木信一
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
  • Year and Date: 20140317-20140320
• [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation (2013)
  • Author(s): R.Zhang, W.Chern, X.Yu, M.Takenaka, J.L.Hoyt and S.Takagi
  • Organizer: International Electron Device Meeting (IEDM)
  • Place of Presentation: Washington Hilton, Washington, DC, USA
  • Year and Date: 20131209-11
• [Presentation] III-V/Ge device engineering for CMOS photonics (2013)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: 8th international conference on processing and manufacturing of advanced materials (THERMEC2013)
  • Place of Presentation: Rio Hotel, Las Vegas, USA
  • Year and Date: 20131202-20131206
  • Invited
• [Presentation] 低消費電力CMOSのため高移動度チャネルトランジスタ技術 (2013)
  • Author(s): 高木信一
  • Organizer: 第29回 (2013) 京都賞記念ワークショップ 先端技術部門「集積回路の発展50年とその未来－超高集積メモリ・省電力LSI に向けてー」
  • Place of Presentation: 国立京都際会館（京都府京都市）
  • Year and Date: 20131112-20131112
  • Invited
• [Presentation] Performance Enhancement Technologies in III-V/Ge MOSFETs (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
  • Organizer: 224th Fall meeting of the Electrochemical Society, ULSI Process Integration 8
  • Place of Presentation: The Hilton San Francisco Hotel, San Francisco, USA
  • Year and Date: 20131027-20131101
  • Invited
• [Presentation] Ultra-thin body MOS device technologies using high mobility channel materials (2013)
  • Author(s): S.Takagi, S.-H.Kim, M.Yokoyama, W.-K.Kim, R.Zhang and M.Takenaka
  • Organizer: IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
  • Place of Presentation: Hyatt Regency Monterey Hotel and Spa, Monterey, USA
  • Year and Date: 20131007-10
  • Invited
• [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels (2013)
  • Author(s): S.Takagi and M.Takenaka
  • Organizer: IEEE Nanotechnology Materials and Devices Conference (NMDC)
  • Place of Presentation: National Cheng Kung University, Tainan, Taiwan
  • Year and Date: 20131006-09
  • Invited
• [Presentation] High Mobility Channel CMOS Technology (2013)
  • Author(s): S. Takagi
  • Organizer: 2013 International Conference on Solid State Devices and Materials (SSDM) Short Course, A. Fundamentals on Advanced CMOS/Memory technologies
  • Place of Presentation: ヒルトン福岡シーホーク（福岡県福岡市）
  • Year and Date: 20130924-20130924
  • Invited
• [Presentation] Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures (2013)
  • Author(s): J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府京田辺市）
  • Year and Date: 20130916-20130920
• [Presentation] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing (2013)
  • Author(s): R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府京田辺市）
  • Year and Date: 20130916-20130920
• [Presentation] 酸化濃縮基板へのSbドーピングにより作製した極薄膜Ge-on-Insulator nMOSFETs (2013)
  • Author(s): 金佑彊, 忻宇飛, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府京田辺市）
  • Year and Date: 20130916-20130920
• [Presentation] III-V/Ge MOS Interface Control Using and High k Films (2013)
  • Author(s): S.Takagi, R.Zhang, R.Suzuki, C.-Y.Chang, N.Taoka, S.-H.Kim, M.Yokoyama and M.Takenaka
  • Organizer: 15th Asian Chemical Congress (15ACC)
  • Place of Presentation: Resorts World Sentosa, Singapore, Singapore
  • Year and Date: 20130819-23
  • Invited
• [Presentation] III-V/Ge CMOSフォトニクス実現に向けたデバイス技術 (2013)
  • Author(s): 竹中充, 高木信一
  • Organizer: 第77回半導体・集積回路技術シンポジウム
  • Place of Presentation: 東京工業大学蔵前会館（東京都目黒区）
  • Year and Date: 20130711-20130712
  • Invited
• [Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI (2013)
  • Author(s): S. Takagi and M. Takenaka
  • Organizer: International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
  • Place of Presentation: Grand Hôtel de Paris, Villard de Lans, France
  • Year and Date: 20130708-20130711
  • Invited
• [Presentation] Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces (2013)
  • Author(s): R.Zhang, Ju-Chin Lin, X.Yu, M.Takenaka and S.Takagi
  • Organizer: 18th Conference of "Insulating Films on Semiconductors" (INFOS)
  • Place of Presentation: The Jagiellonian University, Cracow, Poland
  • Year and Date: 20130625-28
• [Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties (2013)
  • Author(s): S. Takagi, R. Zhang and M. Takenaka
  • Organizer: 18th Conference of "Insulating Films on Semiconductors" (INFOS)
  • Place of Presentation: The Jagiellonian University, Cracow, Poland
  • Year and Date: 20130625-20130628
  • Invited
• [Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing (2013)
  • Author(s): R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
  • Organizer: 2013 Symposia on VLSI Technology
  • Place of Presentation: リーガロイヤルホテル京都（京都府京都市）
  • Year and Date: 20130612-20130614
• [Presentation] High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation (2013)
  • Author(s): S. Takagi, R. Zhang and M. Takenaka
  • Organizer: JSPS Core-to-Core Program Seminar, “Atomically Controlled Processing for Ultralarge Scale Integration”
  • Place of Presentation: 九州大学医学部百年講堂（福岡県福岡市）
  • Year and Date: 20130606-20130606
  • Invited
• [Presentation] Characterization of Interface Properties of Au/Al2O3/GeOx/Ge MOS Structures (2013)
  • Author(s): J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
  • Organizer: 6th International Symposium on Control of Semiconductor Interfaces (ISCSI)
  • Place of Presentation: 九州大学医学部百年講堂（福岡県福岡市）
  • Year and Date: 20130605-20130606
• [Presentation] III-V/Ge CMOS device technologies for high performance logic applications (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
  • Organizer: 223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
  • Place of Presentation: The Sheraton Centre Toronto Hotel, Toronto, Canada
  • Year and Date: 20130512-20130517
  • Invited
• [Presentation] Limiting factors of channel mobility in III-V/Ge MOSFETs (2013)
  • Author(s): S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
  • Organizer: 223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
  • Place of Presentation: The Sheraton Centre Toronto Hotel, Toronto, Canada
  • Year and Date: 20130512-20130517
• [Presentation] III-V/Ge CMOS device technologies (2013)
  • Author(s): S.Takagi and M.Takenaka
  • Organizer: 20th Symposium on Nano Device Technology (SNDT)
  • Place of Presentation: International Conference Hall of Nano Device Laboratory, Hsinchu, Taiwan
  • Year and Date: 20130425-26
  • Invited
• [Presentation] MOS interface engineering for high-mobility Ge CMOS (2013)
  • Author(s): M.Takenaka, R.Zhang, and S.Takagi
  • Organizer: International Reliability Physics Symposium (IRPS)
  • Place of Presentation: Hyatt Regency Monterey, Monterey, USA
  • Year and Date: 20130414-18
  • Invited
• [Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance (2013)
  • Author(s): S. Takagi, R. Zhang, N. Taoka, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka
  • Organizer: 2013 MRS (Material Research Society) Spring Meeting, Symposium CC “Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory”
  • Place of Presentation: Moscone Center, San Francisco, USA
  • Year and Date: 20130401-20130405
  • Invited
• [Remarks] 高木・竹中研究室
  • URL: http://www.mosfet.k.u-tokyo.ac.jp/