2013 Fiscal Year Final Research Report
Study of lasing threshold reduction caused by electron spin polarization in the active region of laser diodes
| Project/Area Number |
23310094
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Aoyama Gakuin University (2013)
Nara Institute of Science and Technology (2011-2012) |
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Principal Investigator |
KOH Shinji 青山学院大学, 理工学部, 准教授 (50323663)
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| Co-Investigator(Renkei-kenkyūsha) |
KAWAGUCHI Hitoshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (40211180)
IKEDA Kazuhiro 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (70541738)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 円偏光レーザ発振 / スピン注入 / 半導体量子井戸 / GaAs(110) |
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| Research Abstract |
Vertical cavity surface emitting lasers (VCSELs) driven by electrical spin injection have been investigated. We focused on the circularly polarized lasing and lasing threshold reduction caused by spin polarization in the active region of the VCSELs. We have investigated molecular beam epitaxy growth of Fe and FePt layers on GaAs(110) surfaces for the spin injection electrodes, and characterized the structures and magnetic properties of the layers. We succeeded in the spin injection into GaAs(110) quantum wells at low temperature. However, the degree of the circular polarization of the emission observed was about 5% which was unexpectedly low. A high degree of circular polarization, which was expected because of the long spin relaxation time of the electrons in GaAs(110) quantum wells, was not observed.
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