2013 Fiscal Year Final Research Report
Growth of highly oriented h-BN single crystal by chemical vapor deposition method
| Project/Area Number |
23310096
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
WATANABE Kenji 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主席研究員 (20343840)
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| Co-Investigator(Renkei-kenkyūsha) |
TANIGUCHI Takashi 独立行政法人物質・材料研究機構, ナノスケール物質萌芽ラボ, グループリーダー (80354413)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 結晶工学 / 六方晶窒化ホウ素 / グラフェン / 原子層科学 / 結晶成長 / 気相成長 / 格子欠陥 / 電子デバイス |
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| Research Abstract |
Hexagonal boron nitride (h-BN), which has a 2D-plane layered structure composed of nitrogen and boron atoms in sp2 bonding, is a proven and effective substrate for atomic layer materials including graphene, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps.However, to realize atomic layer devices, the single-crystalline growth technique for hBN is of great importance. In this study, we achieved high quality h-BN homoepitaxial growth on the bulk h-BN substrate by employing chemical vapor deposition methods with high-growth temperature.
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