Development of low-background, wide-band and ADC integrated SOI X-ray sensor

2014 Fiscal Year Final Research Report

• Project/Area Number: 23340047
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Astronomy
• Research Institution: Kyoto University
• Principal Investigator: TSURU Takeshi 京都大学, 理学(系)研究科(研究院), 教授 (10243007)
• Co-Investigator(Kenkyū-buntansha): ARAI Yasuo 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 教授 (90167990) ; NAKAZAWA Kazuhiro 東京大学, 大学院理学系研究科, 講師 (50342621)
• Co-Investigator(Renkei-kenkyūsha): NAKAJIMA Hiroshi 大阪大学, 大学院理学研究科, 助教 (70570670)
• Project Period (FY): 2011-04-01 – 2015-03-31
• Keywords: Ｘ線天文学 / 宇宙物理 / Ｘ線 / 検出器 / SOI

Outline of Final Research Achievements

We develop monolithic active pixel sensors, X-ray SOIPIXs, based on the SOI technology for next-generation X-ray astronomy satellites. In order to reduce the non-X-ray background dominating above 5-10 keV using the anti-coincidence technique, we develop the event trigger output function implemented in each pixel.
In this study, we developed 4 sensors. The largest chip has the size of 6mm. We successfully produced a fully depleted layer with a thickness of 500μm. We also achieved an energy resolution of 320 eV (FWHM) at 6 keV and a read-out noise of 35e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. We found in-pixel circuitries disturb the electric fields in the sensor and degrade the charge collection efficiency. We successfully solved the problem by changing the location of the in-pixel circuitries. The event-driven readout mode was successfully demonstrated with the time resolution of 10μsec and the throughput of 1kHz.

Free Research Field

数物系科学