New Growth Method for Bulk GaN using molecule-controlling method

2013 Fiscal Year Final Research Report

• Project/Area Number: 23360008
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: KOUKITU Akinori 東京農工大学, 工学(系)研究科(研究院), 教授 (10111626)
• Co-Investigator(Kenkyū-buntansha): KUMAGAI Yoshinao 東京農工大学, 大学院工学研究院, 教授 (20313306) ; MURAKAMI Hisashi 東京農工大学, 大学院工学研究院, 准教授 (90401455)
• Co-Investigator(Renkei-kenkyūsha): TOGASHI Rie 東京農工大学, 大学院工学研究院, 助教
• Project Period (FY): 2011-04-01 – 2014-03-31
• Keywords: 窒化ガリウム / 窒化物 / エピタキシャル成長 / 自立基板結晶 / HVPE / THVPE

Research Abstract

High quality crystal of GaN is a key material promising for energy-saving light emitting and high-power devices. In the study, a new source molecule, which was found out by the thermocynamic analysis and first principle calculation, was used as precursor for hydride vapoe phase epitaxy. Actually, the growth of GaN occured at 1200 C and the growth rate became more than 200 micron-m/hr.

Research Products

• [Journal Article] Growth of Thick InGaN Layers by Tri-Halide Vapor Phase Epitaxy (2014)
  • Author(s): Takahide Hirasaki, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Pages: 0FL02-1-4
• [Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides (2013)
  • Author(s): Takahide Hirasaki, Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai,, Akinori Koukitu
  • Journal Title: Physica Status Solidi C Volume: 10 Pages: 413-416
• [Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase Epitaxy (2013)
  • Author(s): Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai, Akinori Koukitu
  • Journal Title: Physica Status Solidi C Volume: 10 Pages: 472-475
• [Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10-13) crystal on GaAs(110) by MOVPE (2013)
  • Author(s): H.C.Cho, R.Togashi, H.Murakami, Y.Kumagai, A.Koukitu
  • Journal Title: Journal of Crystal Growth Volume: 367 Pages: 122-125
• [Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N2 (2013)
  • Author(s): Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi, Murakami, Yoshinao Kumagai, Akinori Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Pages: 08JB10-1-4
• [Presentation] DUV-LEDs Fabricated on HVPE-AlN Substrates (2013)
  • Author(s): T.Kinoshita, T.Obata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu and Z.Sitar
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington, D.C., U.S.A.
  • Year and Date: 2013-08-26
  • Invited
• [Presentation] Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN (2013)
  • Author(s): Benjamin E.Gaddy, Zachary A.Bryan, Isaac S.Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, Ramon Collazo and Douglas L.Irving
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Washington, D.C., U.S.A.
  • Year and Date: 2013-08-26
• [Presentation] HVPE 法によるAlN 基板作製と260 nm 帯深紫外LED への応用 (2013)
  • Author(s): 熊谷義直, 纐纈明伯
  • Organizer: 応用物理学会応用電子物性分科会研究例会
  • Place of Presentation: 京都テルサ, 京都府
  • Year and Date: 2013-06-07
  • Invited
• [Presentation] Fabrication of DUV-LEDs on AlN Substrates (2013)
  • Author(s): T.Kinoshita, T. bata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu, and Z.Sitar
  • Organizer: Conference on LED and Its Industrial Application '13 (LEDIA '13)
  • Place of Presentation: パシフィコ横浜, 神奈川県
  • Year and Date: 2013-04-25
  • Invited