2013 Fiscal Year Final Research Report
Development of X-ray diffractomator to realize in-situ observation of crystal growth
| Project/Area Number |
23360009
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
TABUCHI MASAO 名古屋大学, シンクロトロン光研究センター, 特任教授 (90222124)
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| Co-Investigator(Renkei-kenkyūsha) |
TAKEDA Yoshikazu 名古屋大学, 工学研究科, 名誉教授 (20111932)
UJIHARA Thoru 名古屋大学, 工学研究科, 教授 (60312641)
OKUDA Hiroshi 京都大学, 工学研究科, 准教授 (50214060)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | X線回折測定 / その場観察 / 結晶成長 / 分光集光結晶 / 回転機構排除 |
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| Research Abstract |
Recently, surface and interface structures of advanced semiconductor devices should be controlled in an atomic scale, and the technique to investigate the real structures of the surfaces and interfaces is getting much important. In order to realize in-situ observation of the semiconductor device structures in conventional crystal growth system via X-ray diffraction and scattering measurements, a special X-ray diffractomator in which all the components, the X-ray source, the detector and the sample, were fixed was developed. A insident X-ray optics using two Johanson monochromator crystals were newly designed and developed to realize the in-situ observation with no motions. Using a compact vacuum chamber specially designed to use with the new optics, a evidence that semiconductor surfaces can really be observed using the system was obtained.
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