2013 Fiscal Year Final Research Report
Study on high-performance current-injected semiconductor-based wavelength conversion devices
| Project/Area Number |
23360028
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
KONDO Takashi 東京大学, 工学(系)研究科(研究院), 教授 (60205557)
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| Co-Investigator(Renkei-kenkyūsha) |
MATSUSHITA Tomonori 東京大学, 大学院工学系研究科, 助教 (50554086)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 非線形光学 / MBE，エピタキシャル / 波長変換 / キャリア注入 / 副格子交換エピタキシー / 高性能レーザー / 導波路デバイス / 疑似位相整合 |
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| Research Abstract |
We have investigated high-performance wavelength conversion devices fabricated using semiconductors exhibiting quadratic optical nonlinearities. We have optimized process conditions for fabricating low-loss periodically-inverted GaAs/AlGaAs waveguiding quasi-phase-matching (QPM) devices in order to achieve higher conversion efficiencies. The obtained lowest propagation loss was 1.3 dB/cm at the wavelength of 1.55 um. We have performed a numerical simulation on performances of current-injected AlGaAs QPM devices for the first time. We have revealed that practical current densities lead to net gains and thus extremely high conversion efficiencies. We fabricated a periodically-inverted GaAs pn-junction device for the first time, and evaluated its electrical and optical properties.
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[Presentation] 化合物半導体導波路を用いた波長変換素子の進展2011
Author(s)
松下智紀, 金泰雄, 近藤高志
Organizer
電子情報通信学会 集積光デバイスと応用技術時限研究専門委員会(IPDA)研究会「アクティブデバイスと集積化技術、一般「材料デバイスサマーミーティング」
Place of Presentation
機械振興会館 (Tech. Rep. of IEICE, OPE2011-19, 21--24 (2011))
Year and Date
2011-06-30
