2013 Fiscal Year Final Research Report
Modeling of plasma process surface reaction mechanism using energy-controllable particle beams
| Project/Area Number |
23360040
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied physics, general
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SAMUKAWA Seiji 東北大学, 流体科学研究所, 教授 (30323108)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 中性粒子ビーム / エッチング形状予測 / オンウェハモニタリング / 紫外光照射損傷 / イオンシース / 第一原理計算 / ワイヤレス測定 / 欠陥生成 |
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| Research Abstract |
To understand influence of electric charge and ultraviolet photons in plasma etching, investigation was performed by separating different types of incident particles. Without charged particles or UV photons, etching profile was found to be determined by angular distribution of incident beam. In case of etching with charged particles, it is important to understand trajectory bending of ion. Such bending occurs by electric field of ion sheath. We developed a method to measure sheath condition and predict ion trajectory based on the measurement. Effect of UV irradiation from plasma was investigated as etching damage using on-wafer UV sensor. Surface reaction simulation was developed considering electric charge and excited states.
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Research Products
(43 results)
