2013 Fiscal Year Final Research Report
In-situ TEM observation of silicon fatigue process using resonance compressive fatigue test
| Project/Area Number |
23360054
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
KAMIYA Shoji 名古屋工業大学, 工学(系)研究科(研究院), 教授 (00204628)
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| Co-Investigator(Renkei-kenkyūsha) |
SATO Kazuo 愛知工業大学, 工学研究科, 教授 (30262851)
NAKAJIMA Masahiro 名古屋大学, 工学研究科, 助教 (80377837)
IZUMI Hayato 名古屋工業大学, 工学研究科, 助教 (90578337)
MORITANI Tomokazu 名古屋工業大学, 工学研究科, 助教 (50362322)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | シリコン / MEMS / 疲労試験 / 圧縮応力 / TEM / その場観察 |
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| Research Abstract |
The purpose of this study is to observe directly silicon fatigue process from initial defect to fatigue fracture by in-situ TEM fatigue test for surveying the fatigue mechanism. Compressive-tensile test device with comb drive actuator was fabricated using SOI-MEMS technologies. TEG (test element group) device was electrically actuated by applying voltage under vacuum environment. For fatigue test with controlled stress ratio, TEM holder was developed by assembling a load cell, piezo actuator, and electrostatic probe. Under cyclic compressive load, accumulation of recombination defect was observed using electron beam induced current imaging. It was found that this defect was deeply related with decrease in fracture strength of silicon.
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