2013 Fiscal Year Final Research Report
Development of spintronics devices with using negative spin polarization materials
| Project/Area Number |
23360130
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
TSUNODA Masakiyo 東北大学, 工学(系)研究科(研究院), 准教授 (80250702)
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| Co-Investigator(Kenkyū-buntansha) |
KOKADO Satoshi 静岡大学, 工学研究科, 准教授 (50377719)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | スピントロニクス / 磁性材料 / 磁気抵抗効果 / スピン分極 |
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| Research Abstract |
We succeeded for the single phase synthesis of Mn4N and Co3FeN thin films that have isomorphic structure to Fe4N showing negative spin polarization. The Mn4N thin films exhibited perpendicular magnetic anisotropy. We constructed a theory for anisotropic magnetoresistance (AMR) effects, which takes into account the spin-orbit interaction and the crystal field splitting. Negative AMR ratio observed for the Co3FeN thin films indicated a possibility of them to be half-metals. Inverse tunnel magnetoresistance effects were observed for Fe4N-based magnetic tunnel junctions with a spinel tunnel barrier. High efficiency for spin current generation under ferromagnetic resonance was suggested for Fe4N/Pt bilayers by their large inverse spin Hall signals.
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[Journal Article] Studies on spintronics-related thin films using synchrotron-radiation-based Mossbauer spectroscopy2013
Author(s)
K. Mibu, M. Seto, T. Mitsui, Y. Yoda, R. Masuda, S. Kitao, Y. Kobayashi, E. Suharyad, M. Tanaka, M. Tsunoda, H. Yanagihara, and E. Kita
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Journal Title
Hyperfine Interact
Volume: 217
Pages: 127-135
DOI
Peer Reviewed
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