2013 Fiscal Year Final Research Report
Low temperature polycrystalline thin film transistors for next generation high performance display
| Project/Area Number |
23360137
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
URAOKA Yukiharu 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (20314536)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Mutsumi 龍谷大学, 理工学部, 教授 (60368032)
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| Co-Investigator(Renkei-kenkyūsha) |
ISHIAKAWA Yasuaki 奈良先端科学技術大学院大学, 物質創成 科学研究科, 准教授 (70581130)
NISHIDA Takashi 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (80314540)
HORITA Masahiro 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (50549988)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 薄膜トランジスタ / レーザ結晶化 / 無機EL / ディスプレイ / シリコン薄膜 / プローブ顕微鏡 / ホットキャリア / マイクロ波 |
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| Research Abstract |
In this study, we proposed the fabrication of high performance thin film transistors (TFT) and inorganic electro luminescence panel. For the fabrication of TFTs, crystallization of Si thin film in water, inactivation of channel surface and activation of impurity were mainly performed. For the fabrication of inorganic EL, enhancement of light intensity by irradiation of micro wave and thinning of phosphor layer by atomization were mainly performed. In particular, local analysis of electronic property using probe microscope and hot carrier analysis using emission microscope were performed to improve the performance and reliability. Successfully we could demonstrate the panel operation on plastic substrate.
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Research Products
(20 results)
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[Journal Article] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013
Author(s)
Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa and Yukiharu Uraoka
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Journal Title
Physica Status Solidi C
Volume: 10, 11
Pages: 1561-1564
Peer Reviewed
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[Journal Article] Analysis of Electronic Structure of Amorphous InGaZnO/SiO2 Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy2013
Author(s)
Yoshihiro Ueoka, Yasuaki Ishikawa, Naoyuki Maejima, Fumihiko Matsui, Hirosuke Matsui, Haruka Yamazaki, Satoshi Urakawa, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Daimon, and Yukiharu Uraoka
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Journal Title
Journal of Applied Physics
Volume: 114, 16
Pages: 163713
Peer Reviewed
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[Journal Article] The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability Toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors2013
Author(s)
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Yoshihiro Ueoka, Masaki Fujiwara, Eiji Takahashi, Yasunori Ando, Naoyuki Maejima, Hirosuke Matsui, Fumihiko Matsui, Hiroshi Daimon and Yukiharu Uraoka
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Journal Title
ECS Journal of Solid State Science and Technology
Volume: 3, 2
Pages: Q20
Peer Reviewed
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[Journal Article] Nonvolatile flash memory based on biologically-integrated hierarchical nanostructures2013
Author(s)
Sano, K., Miura, A., Yoshii, S., Okuda, M., Fukuta, M., Uraoka, Y., Fuyuki, T., Yamashita, I., & Shiba, K
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Journal Title
Langmuir
Volume: (in press)
Peer Reviewed
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