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2013 Fiscal Year Final Research Report

Low temperature polycrystalline thin film transistors for next generation high performance display

Research Project

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Project/Area Number 23360137
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNara Institute of Science and Technology

Principal Investigator

URAOKA Yukiharu  奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (20314536)

Co-Investigator(Kenkyū-buntansha) KIMURA Mutsumi  龍谷大学, 理工学部, 教授 (60368032)
Co-Investigator(Renkei-kenkyūsha) ISHIAKAWA Yasuaki  奈良先端科学技術大学院大学, 物質創成 科学研究科, 准教授 (70581130)
NISHIDA Takashi  奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (80314540)
HORITA Masahiro  奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (50549988)
Project Period (FY) 2011-04-01 – 2014-03-31
Keywords薄膜トランジスタ / レーザ結晶化 / 無機EL / ディスプレイ / シリコン薄膜 / プローブ顕微鏡 / ホットキャリア / マイクロ波
Research Abstract

In this study, we proposed the fabrication of high performance thin film transistors (TFT) and inorganic electro luminescence panel. For the fabrication of TFTs, crystallization of Si thin film in water, inactivation of channel surface and activation of impurity were mainly performed. For the fabrication of inorganic EL, enhancement of light intensity by irradiation of micro wave and thinning of phosphor layer by atomization were mainly performed. In particular, local analysis of electronic property using probe microscope and hot carrier analysis using emission microscope were performed to improve the performance and reliability. Successfully we could demonstrate the panel operation on plastic substrate.

  • Research Products

    (20 results)

All 2013 Other

All Journal Article (12 results) (of which Peer Reviewed: 12 results) Presentation (5 results) Remarks (1 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Polycrystalline Silicon Thin-Film Transistor Utilizing Self-Assembled Monolayer for Crystallization2013

    • Author(s)
      Yosuke Tojo, Atsushi Miura, Yasuaki Ishikawa, Ichiro Yamashita and Yukiharu Uraoka
    • Journal Title

      Thin Solid Films

      Volume: 540 Pages: 266-270

    • Peer Reviewed
  • [Journal Article] Thermal Reversibility in Electrical Characteristics of Ultraviolet/Ozone-Treated Graphene2013

    • Author(s)
      Yana Mulyana, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, and Shinji Koh
    • Journal Title

      Appl. Phys. Lett

      Volume: 103, 6 Pages: 3107-3111

    • Peer Reviewed
  • [Journal Article] Size Control in ZnO Nano-Pillar Fabrication Using a Gel-Nanoimprint Process2013

    • Author(s)
      Yasuaki Ishikawa, Shinji Araki, Min Zhang and Yukiharu Uraoka
    • Journal Title

      Applied Mechanics and Materials

      Volume: 372 Pages: 149-152

    • Peer Reviewed
  • [Journal Article] Memristive Nanoparticles Formed Using a Biotemplate2013

    • Author(s)
      Mutsunori Uenuma, Takahiko Ban, Naofumi Okamoto, Bin Zheng, Yasuhiro Kakihara, Masahiro Horita, Yasuaki Ishikawa, Ichiro Yamashita, and Yukiharu Uraoka
    • Journal Title

      Royal Society of Chemical Advances

      Volume: 3 Pages: 18044-18048

    • Peer Reviewed
  • [Journal Article] Characterizations of Al2O3 Gate Dielectric Deposited on n-GaN by Plasma-Assisted Atomic Layer Deposition2013

    • Author(s)
      Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa and Yukiharu Uraoka
    • Journal Title

      Physica Status Solidi C

      Volume: 10, 11 Pages: 1426-1429

    • Peer Reviewed
  • [Journal Article] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013

    • Author(s)
      Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa and Yukiharu Uraoka
    • Journal Title

      Physica Status Solidi C

      Volume: 10, 11 Pages: 1561-1564

    • Peer Reviewed
  • [Journal Article] Analysis of Electronic Structure of Amorphous InGaZnO/SiO2 Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy2013

    • Author(s)
      Yoshihiro Ueoka, Yasuaki Ishikawa, Naoyuki Maejima, Fumihiko Matsui, Hirosuke Matsui, Haruka Yamazaki, Satoshi Urakawa, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Daimon, and Yukiharu Uraoka
    • Journal Title

      Journal of Applied Physics

      Volume: 114, 16 Pages: 163713

    • Peer Reviewed
  • [Journal Article] Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors2013

    • Author(s)
      Juan Paolo Bermundo, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka and Yukiharu Uraoka
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 3, 2 Pages: Q16

    • Peer Reviewed
  • [Journal Article] The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability Toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors2013

    • Author(s)
      Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Yoshihiro Ueoka, Masaki Fujiwara, Eiji Takahashi, Yasunori Ando, Naoyuki Maejima, Hirosuke Matsui, Fumihiko Matsui, Hiroshi Daimon and Yukiharu Uraoka
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 3, 2 Pages: Q20

    • Peer Reviewed
  • [Journal Article] Effect of Contact Material on Amorphous InGaZnO Thin-Film Transistor Characteristics2013

    • Author(s)
      Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraoka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53, 3S1 Pages: 03CC04

    • Peer Reviewed
  • [Journal Article] Nonvolatile flash memory based on biologically-integrated hierarchical nanostructures2013

    • Author(s)
      Sano, K., Miura, A., Yoshii, S., Okuda, M., Fukuta, M., Uraoka, Y., Fuyuki, T., Yamashita, I., & Shiba, K
    • Journal Title

      Langmuir

      Volume: (in press)

    • Peer Reviewed
  • [Journal Article] Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delived by ferritin2013

    • Author(s)
      M. Uenuma, B. Zheng, K. Bundo, M. Horita, Y.Ishikawa, H.Watanabe, I. Yamashita and Y. Uraoka
    • Journal Title

      Journal of Crystal Growth

      Volume: 382 Pages: 31-35

    • Peer Reviewed
  • [Presentation] Reliability of Oxide Thin Film Transitors2013

    • Author(s)
      Yukiharu Uraoka
    • Organizer
      IDMC 2013
    • Place of Presentation
      Taiwan
    • Year and Date
      2013-08-30
  • [Presentation] Unique Property of a-InGaZnO/Ag Interface on Thin Film Transistor2013

    • Author(s)
      Y. Uraoka, Y.Ishikawa and Y.Uraoka
    • Organizer
      20th International Workshop on Active-Matrix Flatpanel Displays and Devices
    • Place of Presentation
      Kyoto
    • Year and Date
      2013-07-03
  • [Presentation] Evaluation of TaOx Nanopaticles for Resistive Memory2013

    • Author(s)
      K. Kado, I. Ymashita and Y.Uraoka
    • Organizer
      2013 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka
    • Year and Date
      2013-06-05
  • [Presentation] Thermal distribution in Amorphous InSnZnO Thin Film Transistors2013

    • Author(s)
      S.Urakawa, Y.Ishikawa and Y.Uraoka
    • Organizer
      The 40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe
    • Year and Date
      2013-05-21
  • [Presentation] Size Control in ZnO Nano-Pillar Fabrication using Gel-Nanoimprint Process2013

    • Author(s)
      Yasuaki Ishikawa, Shinji Araki, Min Zhang and Yukiharu Uraoka
    • Organizer
      2nd Int'l, Conf. on Adv. Mat. Design and Mech
    • Place of Presentation
      Osaka
    • Year and Date
      2013-05-18
  • [Remarks]

    • URL

      http://mswebs.naist.jp/LABs/uraoka/index.html

  • [Patent(Industrial Property Rights)] 基板上へのナノ粒子の配置方法2013

    • Inventor(s)
      浦岡行治, 上沼睦典
    • Industrial Property Rights Holder
      浦岡行治, 上沼睦典
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願 2013-241968
    • Filing Date
      2013-11-22
  • [Patent(Industrial Property Rights)] 保護膜を具備する薄膜トランジスタ基板及びその製造方法2013

    • Inventor(s)
      石河泰明, 浦岡行治
    • Industrial Property Rights Holder
      石河泰明, 浦岡行治
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願 2014-017619
    • Filing Date
      2013-01-31

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Published: 2015-06-25   Modified: 2015-07-08  

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