Research on interface stabilization of diamond junction for developing practical device applications

2013 Fiscal Year Final Research Report

• Project/Area Number: 23360143
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: TOKUYUKI Teraji 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (50332747)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Keywords: ダイヤモンド / ショットキーダイオード / 高耐圧 / 高温耐性 / 界面輸送特性

Research Abstract

Device fabrication procedure of diamond Schottky barrier diodes (SBD) for high voltage operation was investigated. By utilizing tungsten carbide as SBD metal, thermally stable device operation was obtained in the temperature range below 600K. Post annealing of SBD metals is found to be efficient for stabilizing the interface.For the purpose of improving SBD performance, growth condition that satisfies both higher crystalline quality and thicker diamond film growth was explored. Then suppression of substrate etching is crucial for diamond growth on highly boron doped substrate using higher microwave power density.

Research Products

• [Journal Article] Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces (2014)
  • Author(s): J. Michl, T. Teraji, S. Zaiser, I. Jakobi, G. Waldherr, F. Dolde, P. Neumann, M. W. Doherty, N. B. Manson, J. Isoya, J. Wrachtrup
  • Journal Title: App. Phys. Lett Volume: 104 Pages: 102407
  • DOI: 10.1063/1.4868128
  • Peer Reviewed
• [Journal Article] Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces (2014)
  • Author(s): T. Teraji, Y. Koide, and T. Ito
  • Journal Title: Thin Solid Films Volume: 557 Pages: 241
  • DOI: 10.1016/j.tsf.2013.11.132
  • Peer Reviewed
• [Journal Article] Isotopic enrichment of diamond by microwave plasma chemical vapor deposition with high carbon conversion efficiency (2014)
  • Author(s): T. Teraji
  • Journal Title: Thin Solid Films Volume: 557 Pages: 231
  • DOI: 10.1016/j.tsf.2014.01.018
  • Peer Reviewed
• [Journal Article] Improved depth resolution of secondary ion mass spectrometry profiles in diamond : Aquantitative analysis of the delta-doping (2014)
  • Author(s): A Fiori, F Jomard, T. Teraji, G Chicot, E Bustarret
  • Journal Title: Thin Solid Films Volume: 557 Pages: 222
  • DOI: 10.1016/j.tsf.2013.10.076
  • Peer Reviewed
• [Journal Article] Strongly coupled diamond spin qubits by molecular nitrogen implantation (2013)
  • Author(s): T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. McGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honert, J. Wrachtrup, T. Ohshima, F. Jelezko, and J. Isoya
  • Journal Title: Phys. Rev. B Volume: 88 Pages: 201201
  • DOI: 10.1103/PhysRevB.88.201201
  • Peer Reviewed
• [Journal Article] Extending spin coherence times of diamond qubits by high-temperature annealing (2013)
  • Author(s): T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. McGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honert, J. Wrachtrup, T. Ohshima, F. Jelezko, and J. Isoya
  • Journal Title: Phys. Rev. B Volume: 88 Pages: 075206
  • DOI: 10.1103/PhysRevB.88.075206
  • Peer Reviewed
• [Journal Article] Detecting and Polarizing Nuclear Spins with Double Resonance on a Single Electron Spin (2013)
  • Author(s): P. London, J. Scheuer, J.-M. Cai, I. Schwarz, A. Retzker, M. B. Plenio, M. Katagiri, T. Teraji, S. Koizumi, J. Isoya, R. Fischer, L. P. McGuinness, B. Naydenov, and F. Jelezko
  • Journal Title: Phys. Rev. Lett Volume: 111 Pages: 067601
  • DOI: 10.1103/PhysRevLett.111.067601
  • Peer Reviewed
• [Journal Article] Experimental Implementation of Assisted QuantumAdiabatic Passage in a Single Spin (2013)
  • Author(s): J. Zhang, J. H. Shim, I. Niemeyer, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, and D. Suter
  • Journal Title: Phys. Rev. Lett Volume: 110 Pages: 240501
  • DOI: 10.1103/PhysRevLett.110.240501
  • Peer Reviewed
• [Journal Article] Effective use of source gas for diamond growth with isotopic enrichment (2013)
  • Author(s): T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya
  • Journal Title: Appl. Phys. Exp Volume: 6 Pages: 055601
  • DOI: 10.7567/APEX.6.055601
  • Peer Reviewed
• [Journal Article] Synchronized B and 13C Diamond Delta Structures for an Ultimate In-depth Chemical Characterization (2013)
  • Author(s): A. Fiori, F. Jomard, T. Teraji, S. Koizumi, J. Isoya, E. Gheeraert, and E. Bustarret
  • Journal Title: Appl. Phys. Exp Volume: 6 Pages: 045801
  • DOI: 10.7567/APEX.6.045801
  • Peer Reviewed
• [Journal Article] Broadband Excitation by Chirped Pulses : Application to Single Electron Spins in Diamond (2013)
  • Author(s): I. Niemeyer, J. H Shim, J. Zhang, D. Suter, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, and F. Jelezko
  • Journal Title: New Journal of Physics Volume: 15 Pages: 033027
  • DOI: 10.1088/1367-2630/15/3/033027
  • Peer Reviewed
• [Journal Article] High quality p-type chemical vapor deposited {111}-oriented diamonds : Growth and fabrication of related electrical devices (2012)
  • Author(s): A. Lazea, Y. Garino, T. Teraji, S. Koizumi
  • Journal Title: phys. stat. sol. (a) Volume: 209 Pages: 1978-1981
  • DOI: 10.1002/pssa.201228162
  • Peer Reviewed
• [Journal Article] Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors (2012)
  • Author(s): M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez and Y. Koide
  • Journal Title: Jpn. J. Appl. Phys Volume: 51 Pages: 090115
  • DOI: 10.1143/JJAP.51.090115
  • Peer Reviewed
• [Journal Article] Chemical Vapor Deposition of 12C Isotopically Enriched Polycrystalline Diamond (2012)
  • Author(s): T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, M. Liao, Y. Koide, and J. Isoya
  • Journal Title: Jpn. J. Appl. Phys Volume: 51 Pages: 090104 1-7
  • DOI: 10.1143/JJAP.51.090104
  • Peer Reviewed
• [Journal Article] Localized mid-gap-states limited reverse current of diamond Schottky diodes (2012)
  • Author(s): T. Teraji, M.Y. Liao and Y. Koide
  • Journal Title: J. Appl. Phys Volume: 111 Pages: 104503 1-7
  • DOI: 10.1063/1.4712437
  • Peer Reviewed
• [Journal Article] Long coherence time of spin qubits in 12C enriched polycrystalline chemical vapor deposition diamond (2012)
  • Author(s): K.D. Jahnke, B. Naydenov, T. Teraji, S. Koizumi, T. Umeda, J. Isoya, and F. Jelezko
  • Journal Title: Appl. Phys. Lett Volume: 101 Pages: 012405 1-5
  • DOI: 10.1063/1.4731778
  • Peer Reviewed
• [Journal Article] Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond (2012)
  • Author(s): Y. Kato, H. Umezawa, T. Teraji, S. Shikata
  • Journal Title: Diamond Relat. Mater Volume: 23 Pages: 109-111
  • DOI: 10.1016/j.diamond.2012.01.024
  • Peer Reviewed
• [Journal Article] Forward tunneling current in {111}-oriented homoepitaxial diamond p-n junction (2011)
  • Author(s): Y. Garino, T. Teraji, A. Lazea, and S. Koizumi
  • Journal Title: Diamond Relat. Mater Volume: 21 Pages: 33-36
  • DOI: 10.1016/j.diamond.2011.10.007
  • Peer Reviewed
• [Journal Article] detection of killer defects of diamond Schottky barrier diodes (2011)
  • Author(s): S. Ohmagari, T. Teraji, and Y. Koide
  • Journal Title: J. Appl. Phys Volume: 110 Pages: 056105 1-3
  • DOI: 10.1063/1.3626791
  • Peer Reviewed
• [Journal Article] CVD Diamond Dislocations Observed by X-ray Topography, Birefrengence Image and Cathodoluminesence mapping (2011)
  • Author(s): Y. Kato, H. Umezawa, H. Yamaguchi, T. Teraji, and S. Shikata
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1282 Pages: 73-77
  • DOI: 10.1557/opl.2011.446
  • Peer Reviewed
• [Journal Article] Local Stress-strain Structure in CVD Diamond Observed by Raman Peak-shift Mapping (2011)
  • Author(s): Y. Kato, H. Umezawa, T. Teraji, and S. Shikata
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1282 Pages: 61-65
  • DOI: 10.1557/opl.2011.440
  • Peer Reviewed
• [Journal Article] Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers (2011)
  • Author(s): P. Muret, P.-N. Volpe, T.-N. Tran-Thi, J. Pernot, C. Hoarau, F. Omnès, and T. Teraji
  • Journal Title: Diamond Relat. Mater Volume: 20 Pages: 285-289
  • DOI: 10.1016/j.diamond.2011.01.008
  • Peer Reviewed
• [Journal Article] Extreme dielectric strength in boron doped homoepitaxial diamond (2010)
  • Author(s): P.N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, and S. Scharnholz
  • Journal Title: Appl. Phys. Lett Volume: 97 Pages: 223501 1-3
  • DOI: 10.1063/1.3520140
  • Peer Reviewed
• [Journal Article] High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer (2010)
  • Author(s): P.N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, and S. Scharnholz
  • Journal Title: phys. status solide Volume: 207 Pages: 2088-2092
  • DOI: 10.1002/pssa.201000055
  • Peer Reviewed
• [Journal Article] Abnormal current increases induced under high electric fields in asymmetrical graphite-intrinsic-diamond-graphite structures fabricated with high-quality homoepitaxial chemical-vapor-deposited diamond layers (2010)
  • Author(s): M. Hamada, T. Teraji, and T. Ito
  • Journal Title: J. Appl. Phys Volume: 107 Pages: 063708 1-6
  • DOI: 10.1063/1.3327439
  • Peer Reviewed
• [Journal Article] Hall hole mobility in boron-doped homoepitaxial diamond (2010)
  • Author(s): J. Pernot, P. N. Volpe, F. Omnès, P. Muret, V. Mortet, K. Haenen, and T. Teraji
  • Journal Title: Phys. Rev. B Volume: 81 Pages: 2052031-6
  • DOI: 10.1103/PhysRevB.81.205203
  • Peer Reviewed
• [Journal Article] Light intensity dependence of photocurrent gain in single-crystal diamond detectors (2010)
  • Author(s): M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide
  • Journal Title: Phys. Rev. B Volume: 81 Pages: 0333041-4
  • DOI: 10.1103/PhysRevB.81.033304
  • Peer Reviewed
• [Journal Article] Effects of shallow traps on the reverse current of diamond Schottky diode : An electrical transient study (2010)
  • Author(s): Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito
  • Journal Title: phys. stat. sol Volume: 207 Pages: 1460-1463
  • DOI: 10.1002/pssa.200925448
  • Peer Reviewed
• [Presentation] Homoepitaxial Growth of High-Quality Diamond Films and Their Semiconducting Properties (2013)
  • Author(s): T. Teraji
  • Organizer: Workshop on Strategic Japanese-Croatian Cooperative Program 2013
  • Place of Presentation: Todaiji Culture Center, Nara
  • Year and Date: 2013-11-14
  • Invited
• [Presentation] ダイヤモンド高耐圧ダイオードの現状と課題 (2013)
  • Author(s): 寺地徳之
  • Organizer: ニューダイヤモンドフォーラム平成25年度第1回研究会
  • Place of Presentation: 東京大学,目黒
  • Year and Date: 2013-06-27
  • Invited
• [Presentation] Diamond Schottky Barrier Diodes : Current Transport Mechanisms and Thermal Stability (2013)
  • Author(s): T. Teraji
  • Organizer: 1st French-Japanese Workshop on Diamond Power Devices
  • Place of Presentation: Majestic congress center, Chamonix, France
  • Year and Date: 2013-06-20
  • Invited
• [Presentation] p-Type Diamond Schottky Interfaces - Current Transport Mechanisms and Thermal Stability (2013)
  • Author(s): T. Teraji
  • Organizer: 6th Int. Symp. on Control of Semiconductor Interfaces
  • Place of Presentation: Kyushu Univ., Fukuoka
  • Year and Date: 2013-06-05
  • Invited
• [Presentation] p-type diamond Schottky diodes -current transport mechanisms and defects (2012)
  • Author(s): T. Teraji and Y. Koide
  • Organizer: IUMRS-ICEM2012
  • Place of Presentation: PACIFICO YOKOHAMA, Kanagawa, Japan
  • Year and Date: 2012-09-25
  • Invited
• [Presentation] ヘテロエピタキシャルダイヤモンドの横方向成長過程における応力変化(「講演奨励賞受賞記念講演」) (2012)
  • Author(s): 鷲山瞬, 吉川太朗, 児玉英之, 寺地徳之, 鈴木一博, 古滝敏郎, 河野省三, 澤邊厚仁
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学,新宿
  • Year and Date: 2012-03-18
  • Invited
• [Book] 物質・材料研究機構監修 (2011)
  • Author(s): 寺地徳之
  • Total Pages: 859(12)
  • Publisher: オーム社
• [Patent(Industrial Property Rights)] ダイヤモンド半導体デバイス (2013)
  • Inventor(s): 寺地 徳之, 小泉 聡, 小出 康夫
  • Industrial Property Rights Holder: 独立行政法人物質・材料研究機構
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 5360766
  • Filing Date: 2013-09-13
  • Overseas
• [Patent(Industrial Property Rights)] ダイヤモンド結晶成長方法及びダイヤモンド結晶成長装置 (2011)
  • Inventor(s): 寺地 徳之
  • Industrial Property Rights Holder: 独立行政法人物質・材料研究機構
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2011-134198
  • Filing Date: 2011-06-16