2013 Fiscal Year Final Research Report
Green LSI Technology Using High-Performance TFT Fabricated by Area-Selective Processing
| Project/Area Number |
23360144
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
KOTANI Koji 東北大学, 工学(系)研究科(研究院), 准教授 (20250699)
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| Co-Investigator(Kenkyū-buntansha) |
KUROKI Shin-ichiro 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70400281)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 薄膜トランジスタ / 半導体プロセス / レーザーアニール / センサーネットワーク |
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| Research Abstract |
Poly-Si thin films with large crystal grains were formed by continuous-wave laser lateral crystallization with Gaussian laser spot. Strain effects on electron mobility were investigated with tri-gate poly-Si TFTs. Highly bi-axially oriented poly-Si thin films with very long grains were successfully formed by double-line beam continuous wave laser crystallization. High performance TFTs with this well-crystal oriented poly-Si thin films were also fabricated.
As one example of principal elemental circuit of "Green LSI" with advanced TFT technology, a photovoltaic (PV)-assisted high-frequency rectifier has been fabricated with bulk CMOS technology and its performance has been evaluated. It has been found that the TFT technology, which uses a transparent dielectric substrate, has superiority in hybrid integration of PV technology.
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