2013 Fiscal Year Final Research Report
Study on GaN-based normally-off device on Si substrate using selective area growth
| Project/Area Number |
23360154
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
EGAWA Takashi 名古屋工業大学, 工学(系)研究科(研究院), 教授 (00232934)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 有機金属気相成長法 / GaN / 選択再成長 / ノーマリオフ / HEMT |
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| Research Abstract |
GaN-based HEMTs have attractive for high power switching applications. Normally-off operation was one of major requirements for AlGaN/GaN HEMTs. However, realization of normally-off operation with high drain cuurent is difficult due to the existence of two-dimensional electron gas in heterointerface induced piezo and spontaneous polarization charges. Selective area growth (SAG) technique is one of solutions for normally-off operation.
In this study, I report normally-off AlGaN/GaN HEMTs with SAG of an AlGaN layer and deposition of an Al2O3 film on an AlGaN/GaN heterostructure designed to be completely depleted. Adopting AlGaN regrowth in a selective area and Al2O3 film deposition for the access region of the HEMT, the normall-off operation of AlGaN/GaN HEMT was demonstrated. The device showed the drain current density of 160 mA/mm and the threshold voltgae of 0.4 V.
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