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2013 Fiscal Year Final Research Report

Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications

Research Project

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Project/Area Number 23360164
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionToyota Technological Institute

Principal Investigator

SAKAKI Hiroyuki  豊田工業大学, 工学(系)研究科(研究院), 教授 (90013226)

Co-Investigator(Kenkyū-buntansha) OHMORI Masato  豊田工業大学, 大学院・工学研究科, 嘱託研究員 (70454444)
VITUSHINSKIY Pavel  豊田工業大学, 大学院・工学研究科, 研究補助者 (30545330)
AKIYAMA Yoshihiro  豊田工業大学, 大学院・工学研究科, 研究補助者 (60469773)
Co-Investigator(Renkei-kenkyūsha) NODA Takeshi  独立行政法人物質・材料研究機構, 環境・エネルギー材料部門 太陽光発電材料ユニット 超高効率太陽電池グループ, グループリーダー (90251462)
KAWAZU Takuya  独立行政法人物質・材料研究機構, 先端的共通技術部門 先端フォトニクス材料ユニット 量子ナノ構造グループ, 主任研究員 (00444076)
Project Period (FY) 2011-04-01 – 2014-03-31
Keywords光検出器 / 三角障壁 / 量子ドット / 量子ロッド / 分子線エピタキシー / 単一光子検出
Research Abstract

In triangular barrier (TB) diodes, formed by placing acceptors in the middle part of an undoped GaAs layer between a pair of n-type electrodes, electrons are normally blocked by the barrier. Electrons can flow, however, if a sufficiently high voltage is applied to offset the barrier effect. Such diodes work also as photo-detectors, as photo-generated holes get accumulated in the vicinity of acceptors and lower the barrier.
In this work, we have formed by molecular beam epitaxy novel TB diodes, in which type-II GaSb quantum dots are embedded near the acceptor layer. We have shown that their detector performances are greatly improved because photo-generated holes are mostly trapped by GaSb dots and locally reduce the barrier height. We made also TB diodes in which InGaAs quantum rods are embedded across GaAs TB diodes to show that photo-responses are further enhanced, as the electron flow is allowed only through the rods and greatly affected by photo-holes trapped in the rods.

  • Research Products

    (33 results)

All 2014 2013 2012 2011

All Journal Article (15 results) (of which Peer Reviewed: 15 results) Presentation (18 results)

  • [Journal Article] GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications2014

    • Author(s)
      T. Noda, L. M. Otto, M. Elborg, M. Jo, T. Mano, T. Kawazu, L. Han, H. Sakaki
    • Journal Title

      Appl. Phys. Lett

      Volume: 104 Pages: 122102-1-4

    • DOI

      10.1063/1.4869148

    • Peer Reviewed
  • [Journal Article] Triangular-barrier quantum rod photodiodes : Their fabrication and detector characteristics2014

    • Author(s)
      M. Ohmori, Y. Kobayashi, P. Vitushinskiy, S. Nakamura, T. Kojima, H. Sakaki
    • Journal Title

      Appl. Phys. Lett

      Volume: 104, 8 Pages: 081120-1-4

    • DOI

      10.1063/1.4867242

    • Peer Reviewed
  • [Journal Article] Growth of GaSb quantum dots on GaAs (311)A2013

    • Author(s)
      T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    • Journal Title

      J. Cryst. Growth

      Volume: 378 Pages: 475-479

    • DOI

      10.1016/j.jcrysgro.2012.11.020

    • Peer Reviewed
  • [Journal Article] Fabrication of InAs nanoscale rings by droplet epitaxy2013

    • Author(s)
      T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki
    • Journal Title

      J. Cryst. Growth

      Volume: 378 Pages: 529-531

    • DOI

      10.1016/j.jcrysgro.2012.11.036

    • Peer Reviewed
  • [Journal Article] Impacts of ambipolar carrier escape on current-voltage characteristics in a type-I quantum-well solar cell2013

    • Author(s)
      M. Jo, Y. Ding, T. Noda, T. Mano, Y. Sakuma, K. Sakoda, L. Han, H. Sakaki
    • Journal Title

      Appl. Phys. Lett

      Volume: 103, 6 Pages: 061118-1-4

    • DOI

      10.1063/1.4818510

    • Peer Reviewed
  • [Journal Article] Photo-induced current in n-AlGaAs/ GaAs heterojunction channels driven by local illumination at the edge regions of Hall bar2013

    • Author(s)
      T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    • Journal Title

      Appl. Phys. Lett

      Volume: 102, 25 Pages: 252104-1-5

    • DOI

      10.1063/1.4812293

    • Peer Reviewed
  • [Journal Article] Formation of InAs/AlGaAs/GaAs nanowire structures by self-organized rod growth on InAs quantum dots and their transport properties2013

    • Author(s)
      M. Ohmori, P. Vitushinskiy, T. Kojima, H. Sakaki, Appl. Phys
    • Journal Title

      Express

      Volume: 6, 4 Pages: 045003-1-3

    • DOI

      10.7567/APEX.6.045003

    • Peer Reviewed
  • [Journal Article] Effects of Sb/As interdiffusion on optical anisotropy of GaSb quantum dots in GaAs grown by droplet epitaxy2012

    • Author(s)
      T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51, 11 Pages: 115201-1-4

    • DOI

      10.1143/JJAP.51.115201

    • Peer Reviewed
  • [Journal Article] Current-voltage characteristics of GaAs/AlGaAs coupled multiple quantum well solar cells2012

    • Author(s)
      Y. Ding, T. Noda, T. Mano, M. Jo, T. Kawazu, L. Han, H. Sakaki
    • Journal Title

      Jpn.J. Appl. Phys

      Volume: 51, 10 Pages: 10ND08-1-3

    • DOI

      10.1143/JJAP.51.10ND08

    • Peer Reviewed
  • [Journal Article] Anomalous capacitance-voltage characteristics of GaAs/AlGaAs multiple quantum well solar cells2012

    • Author(s)
      T. Noda, T. Mano, M. Jo, Y. Ding, T. Kawazu, H. Sakaki
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51, 10 Pages: 10ND07-1-3

    • DOI

      10.1143/JJAP.51.10ND07

    • Peer Reviewed
  • [Journal Article] Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy2012

    • Author(s)
      T. Noda, T. Mano, M. Jo, T. Kawazu, H. Sakaki
    • Journal Title

      J. Appl. Phys

      Volume: 112, 6 Pages: 063510-1-4

    • DOI

      10.1063/1.4752255

    • Peer Reviewed
  • [Journal Article] Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs2011

    • Author(s)
      T. Kawazu, Y. Akiyama, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    • Journal Title

      Appl. Phys. Lett

      Volume: 99 Pages: 231901-1-3

    • DOI

      10.1063/1.3665394

    • Peer Reviewed
  • [Journal Article] Anisotropic scattering of elongated GaSb/GaAs quantum dots embedded near two-dimensional electron gas2011

    • Author(s)
      G. Li, C. Jiang, H. Sakaki
    • Journal Title

      J. Nanoscience and Nanotechnology

      Volume: 11, 12 Pages: 10792-10795

    • DOI

      10.1166/jnn.2011.3980

    • Peer Reviewed
  • [Journal Article] Self-assembled growth of GaSb type- II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs2011

    • Author(s)
      T. Kawazu, Y. Akiyama, H. Sakaki
    • Journal Title

      J. Cryst. Growth

      Volume: 335, 1 Pages: 1-3

    • DOI

      10.1016/j.jcrysgro.2011.09.016

    • Peer Reviewed
  • [Journal Article] Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs2011

    • Author(s)
      T. Kawazu, H. Sakaki
    • Journal Title

      Japanese J. Appl. Phys

      Volume: 50 Pages: 04DJ06-1-4

    • DOI

      10.1143/JJAP.50.04DJ06

    • Peer Reviewed
  • [Presentation] Recent progress in self-organized growth of quantum dot and wire structures and their advanced device applications2014

    • Author(s)
      H. Sakaki
    • Organizer
      Trends in Nanotechnology International Conference (TNT Japan)
    • Place of Presentation
      Tokyo Big Sight , Tokyo, Japan
    • Year and Date
      2014-01-29
  • [Presentation] Growth of GaSb quantum dots on GaAs (111)A2013

    • Author(s)
      T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    • Organizer
      12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Colloquium on Scanning Probe Microscopy(ACSIN-12 & ICSPM21)
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba, Japan
    • Year and Date
      2013-11-07
  • [Presentation] Epitaxy and advanced device applications of quantum dots and related nanostructures2013

    • Author(s)
      H. Sakaki
    • Organizer
      4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2013)
    • Place of Presentation
      Lake Arrowhead, California, USA
    • Year and Date
      2013-09-30
  • [Presentation] InAs/AlGaAs 量子ロッド構造の電流電圧特性2013

    • Author(s)
      小嶋友也, 大森雅登, Pavel Vitushinskiy, 榊 裕之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス
    • Year and Date
      2013-09-18
  • [Presentation] 量子ドット構造を用いた三角障壁フォトダイオードの光検出特性2013

    • Author(s)
      中村 翔, 大森雅登, Pavel Vitushinskiy, 榊 裕之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス
    • Year and Date
      2013-09-16
  • [Presentation] Post-growth anealing of GaSb quantum dots in GaAs formed by droplet epitaxy2013

    • Author(s)
      T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    • Organizer
      The 40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe Convention Center, Kobe, Japan
    • Year and Date
      2013-05-20
  • [Presentation] Fabrication of InAs nanoscale rings by droplet epitaxy and their optical properties2012

    • Author(s)
      T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki
    • Organizer
      The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      Nara, Japan
    • Year and Date
      2012-09-25
  • [Presentation] Growth of GaSb quantum dots on GaAs (311)A2012

    • Author(s)
      T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    • Organizer
      The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      Nara, Japan
    • Year and Date
      2012-09-25
  • [Presentation] Molecular beam epitaxy of quantum dots and wires and their advanced device applications2012

    • Author(s)
      H. Sakaki
    • Organizer
      The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      Nara, Japan
    • Year and Date
      2012-09-24
  • [Presentation] GaAs(311)A 基板上のGaSb ドットの成長2012

    • Author(s)
      川津琢也, 野田武司, 間野高明, 佐久間芳樹, 榊 裕之
    • Organizer
      2012年秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学
    • Year and Date
      2012-09-12
  • [Presentation] GaSb/GaAs 量子ドットを埋め込んだp 型FET による光検出の可能性2012

    • Author(s)
      片岡政人, 大森雅登, 榊 裕之
    • Organizer
      2012年秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学
    • Year and Date
      2012-09-11
  • [Presentation] 微傾斜GaAs(111)B 基板上のGaSb タイプII ナノロッドの自己形成2012

    • Author(s)
      川津琢也, 秋山芳広, 野田武司, 間野高明, 佐久間芳樹, 榊 裕之
    • Organizer
      2012年春季 第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
  • [Presentation] 液滴エピタキシーで形成したInAs リングの光学特性2012

    • Author(s)
      野田武司, 間野高明, 定 昌史, 川津琢也, 丁 毅, 榊 裕之
    • Organizer
      2012年春季 第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
  • [Presentation] InAs/AlGaAs コラム状量子ドットを用いたナノ細線の形成と評価2012

    • Author(s)
      大森雅登, Pavel Vitushinskiy, 榊 裕之
    • Organizer
      012年春季 第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
  • [Presentation] Structural and transport properties of InAs/AlGaAs columnar quantum dots2012

    • Author(s)
      M. Ohmori, P. Vitushinskiy, H. Sakaki
    • Organizer
      17th International Winterschool Mauterndorf 2012
    • Place of Presentation
      Mauterndorf, Austria
    • Year and Date
      2012-02-14
  • [Presentation] ナノ細線フォトトランジスタの形成と光検出特性の評価2011

    • Author(s)
      小林由幸, 大森雅登, Pavel Vitushinskiy, 榊 裕之
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
  • [Presentation] 液滴エピタキシー法によるGaSb/GaAs 量子ドットの後熱処理効果2011

    • Author(s)
      川津琢也, 野田武司, 間野高明, 佐久間芳樹, 榊 裕之
    • Organizer
      2011年秋季 第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-31
  • [Presentation] Photoconductive properties of triangular barrier diodes with embedded type II GaSb quantum dots2011

    • Author(s)
      H. Sakaki
    • Organizer
      The 10th Japan-Sweden QNANO Workshop
    • Place of Presentation
      Visby, Sweden
    • Year and Date
      2011-06-14

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Published: 2015-06-25  

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