2013 Fiscal Year Final Research Report
Mechanism of hetero nano-structure formation and electrical properties of relaxor ferroelectric thin films
| Project/Area Number |
23360283
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SATO Kazuhisa 東北大学, 金属材料研究所, 助教 (70314424)
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| Co-Investigator(Renkei-kenkyūsha) |
NISHIMATSU Tsuyoshi 東北大学, 金属材料研究所, 助教 (70323095)
YAMADA Tomoaki 名古屋大学, 工学研究科, 准教授 (80509349)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | リラクサー / 極性ナノ領域 / 化学的秩序構造 / ヘテロナノ組織 / 原子変位 / HAADF-STEM / TEM / 局所弾性場 |
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| Research Abstract |
This study examined that the formation behavior of chemically ordered regions (CORs) in Pb(Mg1/3Nb2/3)O3 (PMN) thin film. CORs nucleated at the crystallization temperature of 650˚C, which was as half as the processing temperature for bulk PMN crystals. The formation of CORs was occurred mainly by nucleation under the post annealing treatments at 700˚C or 800˚C, and they grow by contacting each other. An atomic resolution compositional analysis was attempted to directly detect Mg/Nb atomic arrangements in the PMN lattice. These results show that the nano-structure design of PMN, inhibition of the growth of COR, would improve electrical properties of PMN.
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