Deposition of high purity silicon by electrolysis of low purity silicon

2014 Fiscal Year Final Research Report

• Project/Area Number: 23360334
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Metal making engineering
• Research Institution: The University of Tokyo
• Principal Investigator: HIDEAKI Sasaki 東京大学, 生産技術研究所, 助教 (10581746)
• Co-Investigator(Kenkyū-buntansha): MAEDA Masafumi 東京大学, 生産技術研究所, 教授 (70143386)
• Project Period (FY): 2011-04-01 – 2015-03-31
• Keywords: シリコン / ホウ素 / 電気分解 / シリサイド / 高温質量分析

Outline of Final Research Achievements

Silicon was electrochemically reduced in a molten oxide mixture including SiO2. Formation of a solid solution and silicide layer was observed on iron and nickel cathodes. The relationship between electrolytic conditions and the activities of silicon in the products was considered, and the electrochemical reaction was discussed based on thermodynamics and kinetics.
Because boron is an impurity element which is difficult to remove in refining of silicon, evaporations of boron oxide and its suboxide were also studied. Formation of gas species such as B2O3(g) and B2O2(g) were evaluated by a Knudsen cell mass spectrometer to discuss evaporation of boron depending on the oxygen potential.

Free Research Field

素材プロセス工学