Fundamental study on uniform mixed semiconductor crystal by external force application and control of solid-liquid intercial instability

2013 Fiscal Year Final Research Report

• Project/Area Number: 23360343
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Properties in chemical engineering process/Transfer operation/Unit operation
• Research Institution: Osaka University
• Principal Investigator: OKANO Yasunori 大阪大学, 基礎工学研究科, 教授 (90204007)
• Co-Investigator(Kenkyū-buntansha): TAKAGI Youhei 大阪大学, 基礎工学研究科, 助教 (40435772) ; HAYAKAWA Yasuhiro 静岡大学, 電子工学研究所, 教授 (00115453) ; MINAKUCHI Hisashi 琉球大学, 工学部, 助教 (00115453)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Keywords: 結晶成長 / 数値解析 / 物質移動 / 界面 / 半導体

Research Abstract

Solid-liquid interfacial instability during growth of mixed crystal suchi as IngaSb and Si/Ge was experimentally and numerically investigated. Effect of gravity and intefacial kinetics on the interfacial instability during growth by the temperature gradient methid was clarified, and numerical simulation code, which can take into acount of such effects, was developed. In the crystal growth of Si/Ge by the floating zone method, Marangoni convection in the melt was clarified, and effect of crystal rotation and horizontal/vertical magnetic field application effect on the suppression of Marangoni convection was clarified by using numerical simulation.

Research Products

• [Journal Article] The relative contributions of thermo-solutal Marangoni convections on flow patterns in a liquid bridge (2014)
  • Author(s): H. Minakuchi, Y. Takagi, Y. Okano, S. Gima, S. Dost
  • Journal Title: J.Cryst.Growth Volume: vol 385 Pages: 61-65
  • Peer Reviewed
• [Journal Article] Numerical smulation of InGaSb crystal growth by temperature gradient method under normal- and micro-gravity fields (2013)
  • Author(s): M.Nobeoka, Y.Takagi, Y.Okano. Y.Hayakawa and S.Dost
  • Journal Title: J.Cryst.Growth Volume: vol.385 Pages: 66-71
  • Peer Reviewed
• [Journal Article] Bulk growth of InGaSb alloy semiconductor under terrestrial conditions : A preliminary study for microgravity experiments at ISS (2012)
  • Author(s): M.Arivanandhan, G.Rajesh, A.Tanaka, T.Ozawa, Y.Okano, Y.Inatomi and Y.Hayakawa
  • Journal Title: Defect and Diffusion Form Volume: vol.323-325 Pages: 539-544
  • Peer Reviewed
• [Presentation] InGaSb混晶半導体作製に及ぼす重力の影響 (2014)
  • Author(s): 岡野泰則, 高木洋平, ハルヨ・ミルサンディ, 延岡雅弘, 稲富裕光, 早川泰弘
  • Organizer: 化学工学会 第79年会
  • Place of Presentation: 岐阜大学
  • Year and Date: 20140317-19
• [Presentation] 対流構造に及ぼす温度差と濃度差のマランゴニ対流の共存効果に関する数値解析 (2013)
  • Author(s): 水口尚, 儀間悟, 岡野泰則
  • Organizer: 日本機械学会第25回計算力学講演会
  • Place of Presentation: 岐阜大学
  • Year and Date: 20131000
• [Presentation] Effect of solute transport on dissolution of Si into Ge melt and growth of SiGe (2013)
  • Author(s): M.Omprakash, M.Arivanandhan, R. Arun Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
  • Organizer: 第60回応用物理学関係連合講演会
  • Place of Presentation: (神奈川工科大学)(神奈川県厚木市)
  • Year and Date: 2013-03-29