• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2013 Fiscal Year Final Research Report

Theory of atom diffusion and structural stability of metal/semiconductor interfaces: from inorganic to organic systems

Research Project

  • PDF
Project/Area Number 23540361
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Condensed matter physics I
Research InstitutionChiba University

Principal Investigator

NAKAYAMA Takashi  千葉大学, 理学(系)研究科(研究院), 教授 (70189075)

Project Period (FY) 2011 – 2013
Keywords金属/半導体界面 / 第一原理計算 / 原子拡散 / 混晶化 / 構造安定性 / 界面欠陥 / 金属誘起ギャップ状態 / 有機半導体
Research Abstract

Atom diffusion and structural stability of metal/inorganic and organic semiconductor interfaces have been studied by using the first-principles quantum mechanical calculations. This project has clarified what causes the atom diffusion, what is the important factor to classify the interface-atom mixing and the compound formation, and how the Schottky barrier changes by the interface defects. Based on these results, we constructed a new theory connecting the stability of interface and the origin of Schottky barrier formation.

  • Research Products

    (35 results)

All 2014 2013 2012 2011 Other

All Journal Article (12 results) (of which Peer Reviewed: 11 results) Presentation (20 results) (of which Invited: 1 results) Book (2 results) Remarks (1 results)

  • [Journal Article] First-principles evaluation of penetration energy of metal atom into Si substrate2014

    • Author(s)
      T. Hiramatsu, T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 53 Pages: 058006-1-3

    • DOI

      10.7567/JJAP.53.058006

    • Peer Reviewed
  • [Journal Article] First-Principles Study of Schottky Barrier Behavior at Fe3Si/Ge(111) Interfaces2014

    • Author(s)
      K. Kobinata, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 53 Pages: 035701-1-7

    • DOI

      10.7567/JJAP.53.035701

    • Peer Reviewed
  • [Journal Article] Firstprinciples study of Pt-film stability on doped graphene sheets2014

    • Author(s)
      T. Park, Y. Tomita, T. Nakayama
    • Journal Title

      Surf. Sci

      Volume: 621 Pages: 7-15

    • DOI

      10.1016/j.susc.2013.10.011

    • Peer Reviewed
  • [Journal Article] Firstprinciples theoretical study of optical properties of oxegen-doped II-VI semiconductors2014

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Physica Stat. Sol. C

      Volume: (in press)

    • DOI

      10.1002/pssc.201300557

    • Peer Reviewed
  • [Journal Article] First-principles study of oxygen-doping states in II-VI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Physica Stat. Sol

      Pages: 1385-1388

    • DOI

      10.1002/pssc.201300249

    • Peer Reviewed
  • [Journal Article] Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon2013

    • Author(s)
      M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi
    • Journal Title

      J. Appl. Phys

      Volume: 114 Pages: 063701-1-7

    • DOI

      10.1063/1.4817432

    • Peer Reviewed
  • [Journal Article] Surface Stability and Growth Kinetics of Compound Semiconductors : An Ab Initio-Based Approach2013

    • Author(s)
      Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
    • Journal Title

      Materials

      Volume: 6 Pages: 3309-3361

    • DOI

      10.3390/ma6083309

    • Peer Reviewed
  • [Journal Article] First-principles Calculations of Metal-atom Diffusion in Oligoacene Molecular Semiconductor Systems2012

    • Author(s)
      Y. Tomita, T. Nakayama
    • Journal Title

      Organic Electr

      Volume: 13 Pages: 1487-1498

    • DOI

      10.1016/j.orgel.2012.04.019

    • Peer Reviewed
  • [Journal Article] Theoretical study of Si-based ionic switch2012

    • Author(s)
      T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Appl. Phys. Lett

      Volume: 100 Pages: 203506-1-3

    • DOI

      10.1063/1.4718758

    • Peer Reviewed
  • [Journal Article] Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces : First-principles study2012

    • Author(s)
      T. Nakayama, K. Kobinata
    • Journal Title

      Thin Solid Films

      Volume: 520 Pages: 3374-3378

    • DOI

      10.3131/jvsj2.54.529

    • Peer Reviewed
  • [Journal Article] N-doping induced band-gap reduction in III-V semiconductors : First-principles calculations2011

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Phys. Stat. Sol. C

      Volume: 8 Pages: 352-355

  • [Journal Article] Optical Response Spectra of Surfaces and Interfaces2011

    • Author(s)
      T. Nakayama
    • Journal Title

      J. Vac.Soc.Jpn

      Volume: 54 Pages: 529-536

    • DOI

      10.1016/j.tsf.2011.10.091

    • Peer Reviewed
  • [Presentation] Quantum Processes of Exciton Dissociation at Semiconductor Heterointerfaces2013

    • Author(s)
      T. Nakayama, K. Sato
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A
    • Year and Date
      20131208-13
  • [Presentation] Enhanced stability of Pt monolayer films on doped graphene sheets2013

    • Author(s)
      Y. Tomita, T. Park, T. Nakayama
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A
    • Year and Date
      20131208-13
  • [Presentation] Quantum processes of Exciton dissociation at Organic Semiconductor Interfaces2013

    • Author(s)
      K. Sato, T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Fukuoka Japan
    • Year and Date
      20130924-27
  • [Presentation] Physics of Interface Segregation; What Determine Schottky Barrier at Metal/Semiconductor Interfaces ?2013

    • Author(s)
      T. Nakayama
    • Organizer
      2013 JSAP-MRS (Japan-USA) Joint Symposia
    • Place of Presentation
      Kyoto Japan
    • Year and Date
      20130916-20
  • [Presentation] FirstPrinciples Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      16th Int. Conf. II-VII Compound and Related Materials
    • Place of Presentation
      Nagahama, Japan
    • Year and Date
      20130909-13
  • [Presentation] Firstprinciples study of oxygen-doping electric optical states in II-VI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      18th Int. Conf. Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
    • Place of Presentation
      Matsue, Japan
    • Year and Date
      20130722-26
  • [Presentation] Firstprinciples study of oxygen-doping states in IIVI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      40th Int. Symp. Compound Semiconductors
    • Place of Presentation
      Kobe Japan
    • Year and Date
      20130519-23
  • [Presentation] First-principles Study of Atomic Impurity States in Organic Semiconductors : Their Chemical Classification2012

    • Author(s)
      Y. Tomita, T. Nakayama, S. Okada
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Year and Date
      20120731-0803
  • [Presentation] Disorderinduced Schottky-barrier Changes at Metal/Semiconductor Interfaces; Firstprinciples Calculations2012

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Year and Date
      20120731-0803
  • [Presentation] Dopingenhanced Stability of Catalytic Pt Ultrathin Films on Graphene Sheet : First-principles Calculations2012

    • Author(s)
      T. Park, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond
    • Place of Presentation
      Zurich Switzerland
    • Year and Date
      20120731-0803
  • [Presentation] Oxygendoping-induced Band-gap Reduction in II-VI Semiconductors; Comparison to III-V Systems2012

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Year and Date
      20120731-0803
  • [Presentation] Firstprinciples study of band-gap reduction of II-VI semiconductors by Oxygen dopings; Comparison to III-V Systems2012

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      17th Int. Conf. Superlattices, Nanostructures, Nanodevices
    • Place of Presentation
      Dresden Germany
    • Year and Date
      20120722-27
  • [Presentation] How and why loop currents are generated in molecular bridge systems : density-matrix calculation of time evolustion2011

    • Author(s)
      T. Nakayama, H. Iizuka, G. Anagama, Y. Tomita
    • Organizer
      ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
    • Place of Presentation
      Maui USA
    • Year and Date
      20111204-09
  • [Presentation] Firstprinciples study of metal-atom diffusion in graphene and organic solids : intrinsic difference from inorganic systems2011

    • Author(s)
      Y. Tomita, T. Nakayama
    • Organizer
      ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
    • Place of Presentation
      Maui USA
    • Year and Date
      20111204-09
  • [Presentation] Physics of Schottkybarrier change by segregation and structural disorder at metal/Si interfaces : First-principles study2011

    • Author(s)
      T. Nakayama
    • Organizer
      ICSI-72011 (7th Int. Conf. Si Epitaxy and Heterostructures)
    • Place of Presentation
      Leuven Belgium
    • Year and Date
      20110828-0901
    • Invited
  • [Presentation] Schottkybarrier change by structural disorders at metal/Si interfaces2011

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      Simulation of Semiconductor Processes and Devices (SISPAD)
    • Place of Presentation
      Osaka Japan
    • Year and Date
      2011-09-10
  • [Presentation] Stability and Schottky Barrier of Spin-polarized Fe3Si/Ge Interfaces; First-Principles Study

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      8th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-8)
    • Place of Presentation
      Fukuoka, Japan
  • [Presentation] Chemical Trend of Atomic Impurity States in Organic Semiconductor Films; Theoretical Investigation

    • Author(s)
      Y. Tomita, T. Nakayama
    • Organizer
      2012 Int. Conf. on Solid State Devices and Materials (SSDM2012)
    • Place of Presentation
      Kyoto Japan
  • [Presentation] Enhanced Stability of Catalytic Pt Ultrathin Films on Doped Graphene Sheets : Firstprinciples Study

    • Author(s)
      T. Park, T. Nakayama
    • Organizer
      6th Int. Symp. Surface Science (ISSS-6)
    • Place of Presentation
      Tokyo Japan
  • [Presentation] How and Why Loop Currents Are Generated in Molecular Bridge Systems : Density-Matrix Calculation of Time Evolution

    • Author(s)
      H. Iizuka, T. Nakayama, G. Anagama
    • Organizer
      6th Int. Symp. Surface Science(ISSS-6)
    • Place of Presentation
      Tokyo Japan
  • [Book] "計算科学に基づく半導体ナノ界面構造と電子物性の評価", 「ポストシリコン半導体-ナノ成膜ダイナミックスと基板・界面効果」4編1章2節2013

    • Author(s)
      中山隆史, 小日向恭祐
    • Total Pages
      424-433
    • Publisher
      (株)NTS出版
  • [Book] "Atomic Structures and Electronic Properties of Semiconductor Interfaces", in "Comprehensive Semiconductor Science and Technology", Eds. Mahajan, Kamimura, and Bhattacharya2011

    • Author(s)
      T. Nakayama, Y. Kangawa, K. Shiraishi
    • Total Pages
      113-174
    • Publisher
      Elsevier B.V.
  • [Remarks]

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

URL: 

Published: 2015-07-16  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi