Measurement of interaction distance of separately trapped electron and hole spins in semiconductor by advanced electron spin resonance method

2014 Fiscal Year Final Research Report

• Project/Area Number: 23540369
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: Wakayama University
• Principal Investigator: AKIMOTO Ikuko 和歌山大学, システム工学部, 准教授 (00314055)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Keywords: 再結合発光 / パルスESR法 / DEER法

Outline of Final Research Achievements

Purpose of this work was to clarify distance distributions between trapped electrons and holes which are going to emit recombination luminescence, by using advanced pulse EPR method. Selecting an appropriate system of doped semiconductor, aluminum doped titanium oxide crystal, modulation signals due to spin dipole interaction between electron and hole were successfully observed at the temperature below 40 K. This is a remarkable observation for a semiconductor. From the analysis of the signal, the modulation was better fitted by a function assuming spin interactions in the distance range of 2~4 nm. This means that spins of electron and hole trapped in an individual crystal unit cell interact over 8~9 unit cells before recombination.

Free Research Field

光物性